Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor
Abstract:Keeping pace with the current research trend dominated by development of junctionless devices, in this work, we have incorporated the innovative concept of work function engineering by continuous horizontal variation of mole fraction in a binary metal alloy gate into a junctionless double gate metal oxide semiconductor field effect transistor. We have thereby presented a new structure, a junctionless work function engineered gate double gate metal oxide semiconductor field effect transistor. A detailed analyti… Show more
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