Threshold-Voltage Modeling of Body-Tied FinFETs (Bulk FinFETs)

Choi, Byung−Kil; Han, Kyoung-Rok; Kim, Young Min; Park, Y.J.; Lee, Jong-Ho

doi:10.1109/ted.2006.890374

Cited by 23 publications

(17 citation statements)

References 18 publications

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“…, where V t is thermal voltage and n i is the intrinsic carrier concentration. The value of V th may have a nominal modification depending on the geometry and dimensions of the fin [25]. As stated earlier, rate of scattering will increase with increasing E, and as a result, a deceleration of carries could occur.…”

Section: Model Developmentmentioning

confidence: 97%

“…Considering the fundamental MOSFET configuration, threshold voltage, V th of (2) is given by [24]

V_{th} = V_{fb} + 2 ψ_{b} + \frac{q N_{b} x_{dep}}{C_{ox}}

where

V_{fb}

defines the flat band voltage, q is the electronic charge,

x_{dep}

is the depletion height,

C_{ox}

defines the oxide capacitor,

N_{b}

is the body doping and

ψ_{b}

is the Fermi potential given by

ψ_{b} = V_{t} \times \ln false(N_{b} / n_{i} false)

, where

V_{t}

is thermal voltage and

n_{i}

is the intrinsic carrier concentration. The value of V th may have a nominal modification depending on the geometry and dimensions of the fin [25]. As stated earlier, rate of scattering will increase with increasing E , and as a result, a deceleration of carries could occur.…”

Section: Model Developmentmentioning

confidence: 99%

See 1 more Smart Citation

Non‐linear compact model for FinFETs output characteristics

Ahmed

Memon

2019

IET Circuits, Devices & Systems

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In this study, a non-linear compact model for I-V characteristics of FinFETs is presented. The model is developed using the profile of drifting carriers, which plays an important role in determining the device characteristics. A mobility model which incorporates the effect of applied potentials is developed and is used to predict the I-V response of the device. Particle swarm parameter extraction technique is engaged for optimum model applications. It is demonstrated by using the experimental data reported in the literature, that the proposed model can predict the I-V characteristics of FinFETs fabricated using Si and GaN materials having gate lengths ranging from 0.05 to 1 μm.

show abstract

Section: Model Developmentmentioning

confidence: 97%

“…Considering the fundamental MOSFET configuration, threshold voltage, V th of (2) is given by [24]

V_{th} = V_{fb} + 2 ψ_{b} + \frac{q N_{b} x_{dep}}{C_{ox}}

where

V_{fb}

defines the flat band voltage, q is the electronic charge,

x_{dep}

is the depletion height,

C_{ox}

defines the oxide capacitor,

N_{b}

is the body doping and

ψ_{b}

is the Fermi potential given by

ψ_{b} = V_{t} \times \ln false(N_{b} / n_{i} false)

, where

V_{t}

is thermal voltage and

n_{i}

Section: Model Developmentmentioning

confidence: 99%

Non‐linear compact model for FinFETs output characteristics

Ahmed

Memon

2019

IET Circuits, Devices & Systems

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show abstract

“…The device structure in this work has a triple-gate structure. The V th model of a long-channel triple-gate device is given by [14],…”

Section: (B)mentioning

confidence: 99%

Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure

Jung

Han

Kim

et al. 2008

IEICE Transactions on Electronics

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A new SONOS flash memory device with recess channel and side-gate was proposed and designed in terms of recess depth, doping profile, and side-gate length for sub-40 nm flash memory technology. The key features of the devices were characterized through 3-dimensional device simulation. This cell structure can store 2 or more bits of data in a cell when it is applied to NOR flash memory. It was shown that channel doping profile is very important depending on NOR or NAND applications. In NOR flash memory application, the localized channel doping under the source/drain junction is very important in designing threshold voltage (V th) and suppression of drain induced barrier lowering (DIBL). In our work, this cell structure is studied not only for NAND flash memory application but also for NOR flash application. The device design was performed in terms of electrical characteristics (V th , DIBL and SS) by considering device structure and doping profile of the cell.

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“…Owing to the indirect band-gap transitions, however, the tunneling ON current in Si-TFETs is low, compared to other TFETs made of III-V semiconductors. [11][12][13][14] In 2014, Mori and coworkers succeeded in remarkably enhancing an ON current in Si-TFET utilizing the isoelectronic co-doping of Al and N atoms around the pn junction. [15][16][17][18][19][20][21] In order to clarify the electronic structures of such codoping systems, our group showed by the first-principles calculation that Al and N atoms produce a nearest-neighboring pair in Si layers and produce an electron-unoccupied isoelectronic impurity state below the conduction-band of Si.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems

Cho

Nakayama

2022

Jpn. J. Appl. Phys.

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Enhancement of tunneling currents by the isoelectronic Al-N/N-atom doping is studied at the pn junctions made of Si, Ge, GaP, InP, and GaAs semiconductors, using the sp3d5s* tight-binding model and the non-equilibrium Green’s function method. With respect to indirect band-gap systems, the doping produces the impurity state in the band gap, and such state produces the resonance with conduction-band states of n-type layers under the electric field. We show that this resonance state works to decrease the tunneling length and promotes the marked enhancement of tunneling current. As for direct band-gap systems, on the other hand, the N-atom doping not only produces the localized N-atom state in the conduction bands but also reduces the band-gap energy. We show that the localized N-atom state does not contribute to the tunneling current, while the band-gap reduction shortens the tunneling length a little and slightly increases the tunneling current.

show abstract

Threshold-Voltage Modeling of Body-Tied FinFETs (Bulk FinFETs)

Cited by 23 publications

References 18 publications

Non‐linear compact model for FinFETs output characteristics

Non‐linear compact model for FinFETs output characteristics

Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure

Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems

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