Threshold voltage of nonuniformly doped MOS structures

Doucet, Gilles; Wiele, F. Van de

doi:10.1016/0038-1101(73)90016-6

Cited by 34 publications

(2 citation statements)

References 13 publications

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“…In the second case, x::: W s + W B' the depletion boundary is in the bulk region, beyond the deep implant region, yielding (8 ) by Doucet and Van de Weile [17] the surface inversion condition is dictated by the doping concentration of the depletion edge. Because there is a discontinuity in the step profile approximation at x d m = W s + WB' there is also a discontinuity in the strong inversion criterion.…”

Section: Introductionmentioning

confidence: 99%

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Threshold Voltage Characteristics of Double-boron-implanted Enhancement-mode MOSFETs

Wang

Spencer

1975

IBM J. Res. & Dev.

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Threshold voltage characteristics are presented for a double boron-ion-implanted n-channel enhancement MOSFET device for high speed logic circuit applications. A 15-0-cm high resistivity p-type (100) substrate was used to achieve low junction capacitance and low threshold substrate sensitivity. A shallow boron implant was used to raise the threshold voltage, and a second, deeper, boron implant was used to increase the punch-through voltage between the source and the drain. This design is especially beneficial for short channel devices, while maintaining the low junction capacitance and low threshold substrate sensitivity of the high resistivity substrate. A one-dimensional analysis was performed to predict the effects of ion implantation dose and energy on the device characteristics, and a quasi two-dimensional analysis was used to account for the short channel effect. The calculated results agree well with the behavior of experimental devices fabricated in the laboratory.

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Section: Introductionmentioning

confidence: 99%

“…The bulk material has a constant ion concentration N B and is taken as the reference level for the potential 1J(x), i.e., 1J = 0 in the bulk. Surface potential is 1J s ' From Poisson's equation and the depletion approximation, one obtains[ 17] T VS L at V o = 0.1 V and IV"I = 5 V.…”

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confidence: 99%

Threshold Voltage Characteristics of Double-boron-implanted Enhancement-mode MOSFETs

Wang

Spencer

1975

IBM J. Res. & Dev.

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MOS structure with a P+P profile

Sinon

Hatert

Wiele

1976

Phys. Stat. Sol. (a)

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A simple semi-analytical method is proposed to compute the principal characteristics of non-uniformly doped MOS devices. By considering an inversion layer with a non-zero width it is possible t o compute the complete C-U curve. The influence of the doping profile on the characteristics of such structures is shown. The high frequency C-U curve calculated by means of the method leads to a more accurate definition of the threshold voltage. Finally, t h e described model may be applied to compute the drain current of non-uniformly doped P+P MOS transistors in good agreement with the experimental values.Le modble semi-analytique simple propose ici est destine au calcul des principales caractbristiques de structures MOS 8, dopage non-uniforme. La prise en compte d'une largeur non nulle de zone d'inversion permet d'6tablir la courbe C-U dans son entikrete.On montrera comment le profil d'impuretbs influence le comportement de tels dispositifs; d'autre part, sur base de courbes C-U haute frbquence 6tablies 8, partir du modble, on pourra prbciser la notion de forte inversion dans ces m6mes structures. Enfin, la mbthode proposbe est appliqnb avec succbs au calcul du courant de transistors MOS B dopage nonuniforme.

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Temperature dependence of capacitance-voltage characteristics in implanted MOS structures

Lysenko

Litovskii

Nazarov

et al. 1982

phys. stat. sol. (a)

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As it is found previously, the maximum value of the capacitance in the C-U curves of implanted MOS structures depends strongly on the temperature and frequency. I n the present work a model iexplaining these effects is developed. The mechanism providing the basis of this model consists n the shunting of the p-n junction, formed by ion implantation in the surface region of the MOS structure, with the diffusion-drift currents. High-frequency C-U characteristics of MOS structures implanted with boron ions at moderate implantation doses and then annealed from 150 to 000 "C are studied in the temperature interval from 80 to 450 K. It is shown that the model proposed describes qualitatively the behaviour of the C-U characteristics observed. The density of active impurities in the surface region and the height of the potential barrier of the p-n junction are estimated.

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Threshold voltage of nonuniformly doped MOS structures

Cited by 34 publications

References 13 publications

Threshold Voltage Characteristics of Double-boron-implanted Enhancement-mode MOSFETs

Threshold Voltage Characteristics of Double-boron-implanted Enhancement-mode MOSFETs

MOS structure with a P+P profile

Temperature dependence of capacitance-voltage characteristics in implanted MOS structures

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