2011
DOI: 10.1016/j.mser.2010.11.001
|View full text |Cite
|
Sign up to set email alerts
|

Threshold voltage shifting for memory and tuning in printed transistor circuits

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
42
0

Year Published

2011
2011
2024
2024

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 42 publications
(43 citation statements)
references
References 173 publications
1
42
0
Order By: Relevance
“…OTFTs with nonvolatile memory effects are one potential option based on their nondestructive readout and single transistor architectural compatibility for easily integrated devices. [297][298][299][300][301] Organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorenealt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium have been fabricated (Fig. 23).…”
Section: -287mentioning
confidence: 99%
“…OTFTs with nonvolatile memory effects are one potential option based on their nondestructive readout and single transistor architectural compatibility for easily integrated devices. [297][298][299][300][301] Organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorenealt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium have been fabricated (Fig. 23).…”
Section: -287mentioning
confidence: 99%
“…Clearly, when the materials are better matched in mobility and threshold voltage, the switching occurs closer to the half‐way point between zero and V dd . This idea is the basis of our previous work using individual OFET threshold‐voltage tuning through charged dielectrics to shift the switching voltage 18, 19. Analytes can affect the switching voltage of inverters made from sensitive semiconductors by changing the threshold voltages and/or mobilities of either or both semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Other technological developments in the organic electronics community would be of additional use for sensors. For example, advances in inkjet‐printing technology and threshold‐voltage tuning by the printing of charged dielectrics18 should enable high‐throughput production of organic‐based digital sensors and their integration with organic memory transistors31 and silicon signal processors.…”
Section: Introductionmentioning
confidence: 99%
“…Among many kinds of memory devices, flash memories which use a floating gate structure are the most widely used151617. To improve the device reliability, the recent trend of designing charge trapping layer for flash memory is to store data in discrete charge trapping cites such as metal or semiconductor nanoparticles181920212223.…”
mentioning
confidence: 99%