“…In EUV lithography, the mask acts as an optical component and has a large potential impact on the aerial image [3]. Multilayer defects of EUV lithography mask may cause severe reflectivity deformation and phase shift in advanced nodes, resulting in local intensity loss of the print image and asymmetric through-focus printing [4] [5]. Figure 1 presents the impact of a simulated pit defect(htop=-5nm, ωtop=90nm, hbot=-5nm, ωbot=90nm) on the printing of a 40 nm line-space pattern.…”