Extreme Ultraviolet (EUV) Lithography IV 2013
DOI: 10.1117/12.2014935
|View full text |Cite
|
Sign up to set email alerts
|

Through-focus EUV multilayer defect repair with nanomachining

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
8
0

Year Published

2014
2014
2023
2023

Publication Types

Select...
5
3

Relationship

1
7

Authors

Journals

citations
Cited by 12 publications
(8 citation statements)
references
References 0 publications
0
8
0
Order By: Relevance
“…Micromachining was introduced to address multilayer defects and attempts to correct for the phase effect by judicious removal of multilayer material. [13][14][15] Despite promising results from prior studies, considerations for HVM and lifetime durability of micromachined repair sites have remained largely unexplored. In particular, exposed multilayer sidewalls have been shown to significantly degrade after several mask cleans.…”
Section: Introductionmentioning
confidence: 97%
“…Micromachining was introduced to address multilayer defects and attempts to correct for the phase effect by judicious removal of multilayer material. [13][14][15] Despite promising results from prior studies, considerations for HVM and lifetime durability of micromachined repair sites have remained largely unexplored. In particular, exposed multilayer sidewalls have been shown to significantly degrade after several mask cleans.…”
Section: Introductionmentioning
confidence: 97%
“…Amplitude defects located at the top of the multilayer will directly affect the absorption or scattering of EUV light and reduce the reflectivity of the multilayer [2]. Phase defects exist in the substrate or inside the multilayer, causing deformation of the multilayer and thus affecting the amplitude and phase of the mask reflection field [6]. In EUV lithography, due to the reduction of exposure wavelength and the reflection characteristics, the EUV mask has unique phase defects [7].…”
Section: Introductionmentioning
confidence: 99%
“…In EUV lithography, the mask acts as an optical component and has a large potential impact on the aerial image [3]. Multilayer defects of EUV lithography mask may cause severe reflectivity deformation and phase shift in advanced nodes, resulting in local intensity loss of the print image and asymmetric through-focus printing [4] [5]. Figure 1 presents the impact of a simulated pit defect(htop=-5nm, ωtop=90nm, hbot=-5nm, ωbot=90nm) on the printing of a 40 nm line-space pattern.…”
Section: Introductionmentioning
confidence: 99%
“…To compensate for the asymmetric through-focus printing effect and the intensity loss, several compensation methods have been proposed. McIntyre et al proposed through-focus multilayer defect repair method with nanomachining [5]. The combination of multilayer material removal and absorber modification methods is used to compensate for the impacts of the bump defects, and deposition of the phase-shifting material is adopted to adjust the phase effects of the pit defects [5].…”
Section: Introductionmentioning
confidence: 99%