Through silicon via profile metrology of Bosch etching process based on spectroscopic reflectometry

Fursenko, O.; Bauer, J.; Marschmeyer, S.; Stoll, H.‐P.

doi:10.1016/j.mee.2015.04.121

Cited by 23 publications

(20 citation statements)

References 9 publications

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“…TSV etching defects which result in interconnecting failures include bottom-corner notch, Si grass at the bottom of the TSV, and surface roughness and scallops from the Bosch process (Choi et al, 2014;Shen & Chen, 2017;Malta, 2014). The parameters for profiles of TSV etching include top and bottom dimensions, depth, sidewall roughness and coplanarity, and scallop size (period and amplitude), which need to be monitored and (Fursenko et al, 2015). A variety of microscopic methods are employed to measure the profile parameters for TSV etching.…”

Section: Introductionmentioning

confidence: 99%

“…The widely used method is to use a scanning electron microscope (SEM), which features extremely high spatial resolution down to the nanometre scale, and specializes in surface morphology like sidewall scalloping roughness (Ham et al, 2011;Inoue et al, 2013) and deposition failure of the barrier layer (Zhang et al, 2015). However, SEM imaging analysis of the cross section of the TSV is destructive, time consuming and depends on the sample-cutting technique (Fursenko et al, 2015). Another nanoscale imaging tool is the atomic force microscope (AFM), which can offer quantitative measurement of surface undulation (Bender et al, 2012;Zhao et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

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Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Li¹,

Deng²,

Zhang³

et al. 2020

J Synchrotron Radiat

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Comprehensive evaluation of through-silicon via (TSV) reliability often requires deterministic and 3D descriptions of local morphological and statistical features of via formation with the Bosch process. Here, a highly sensitive phase-contrast X-ray microtomography approach is presented based on recorrection of abnormal projections, which provides comprehensive and quantitative characterization of TSV etching performance. The key idea is to replace the abnormal projections at specific angles in principles of linear interpolation of neighboring projections, and to distinguish the interface between silicon and air by using phase-retrieval algorithms. It is demonstrated that such a scheme achieves high accuracy in obtaining the etch profile based on the 3D microstructure of the vias, including diameter, bottom curvature radius, depth and sidewall angle. More importantly, the 3D profile error of the via sidewall and the consistency of parameters among all the vias are achieved and analyzed statistically. The datasets in the results and the 3D microstructure can be applied directly to a reference and model for further finite element analysis. This method is general and has potentially broad applications in 3D integrated circuits.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Li¹,

Deng²,

Zhang³

et al. 2020

J Synchrotron Radiat

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show abstract

“…Several optical techniques can be used for measuring TSV depths, including spectral reflectometry [4][5][6][7][8][9][10][11], backside infrared spectral reflectometry [12][13][14], ellipsometry (for rather shallow trenches) [15], confocal chromatic microscopy [16] and time domain OCT [16][17][18][19], and hybrid systems [19,20]. Time domain OCT, whose principle is sketched in fig.…”

Section: Introductionmentioning

confidence: 99%

“…Works on TSV height measurement by any optical technique incorporate up to our knowledge either non-electromagnetic models for light propagation inside TSV [4][5][6][7]26] or time-consuming rigorous computations with the Rigorous Coupled Wave Analysis (RCWA) [8][9][10][11]. This paper aims at an estimate and improvement of the accuracy of TSV depth measurements by application of electromagnetic but rapid calculations.…”

Section: Introductionmentioning

confidence: 99%

“…This paper aims at an estimate and improvement of the accuracy of TSV depth measurements by application of electromagnetic but rapid calculations. Although our work is focused on time domain OCT, any optical measurement technique such as spectral reflectometry [4][5][6][7][8][9][10][11][12][13][14] could benefit from the results of our rigorous modal calculations at single TSVs based on Fourier-Bessel functions [27,28] and our simplified yet accurate, more efficient models derived from it.…”

Section: Introductionmentioning

confidence: 99%

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Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

et al. 2019

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This article reports on progress in the analysis of Time-Domain Optical Coherence Tomography (OCT) applied to the dimensional metrology of Through Silicon Vias (TSV, vertical interconnect accesses in silicon, enabling 3D integration in micro-electronics) and estimates the deviations from earlier, simpler models. The considered TSV structures are 1D trenches and circular holes etched into silicon with a large aspect ratio. As a prerequisite for a realistic modelling, we work with spectra obtained from reference interferograms measured at a planar substrate, which fully includes the dispersion of the OCT apparatus. Applying a rigorous modal approach, we estimate the differences to a pure ray tracing technique. Accelerating our computations, we focus on the relevant fundamental modes and apply a Fabry-Perot model as an efficient approximation. Exploiting our results, we construct and present an iterative procedure based on the minimization of a merit function, which concludes TSV heights reliably, accurately and rapidly from measured interferograms.

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A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

Xia,

Zhang,

et al. 2024

Adv Eng Mater

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Through‐silicon via (TSV) technology realizes high‐density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials. It is an effective way to achieve miniaturization, lightweight, and multi‐functionality in post‐Moore microelectronics. In this review, the process optimization in TSV preparation, various filling techniques, and different filler materials are comprehensively summarized and discussed. It also delves into the characterization and reliability analysis of TSV performance under multi‐physical fields of mechanical, thermal, and electrical. Moreover, the review explores the challenges and solutions for TSVs in regards of integration/packaging and cost aspects. This review can be used to understand the latest research progresses and applications of TSVs, and provide reference and guidance for future research and applications for advanced TSV technology.

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Through silicon via profile metrology of Bosch etching process based on spectroscopic reflectometry

Cited by 23 publications

References 9 publications

Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Electromagnetic analysis for optical coherence tomography based through silicon vias metrology

A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

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