Through-Silicon Vias: Drivers, Performance, and Innovations

Thadesar, Paragkumar A.; Gu, Xiaoxiong; Alapati, Ramakanth; Bakir, Muhannad S.

doi:10.1109/tcpmt.2016.2524691

Cited by 45 publications

(9 citation statements)

References 96 publications

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“…By contrast, TSV inductors 27 have the advantage of integrated circuit (IC) integration, that is, co-packaged or stacked systems in a package 29,30 . MEMS TSVs are known to be a promising technology for miniaturized RF MEMS and advanced system packaging and integration 31,32 . With the necessity of high-aspect-ratio TSVs for compact 3D inductors, fabrication technology for Si-embedded inductors is still a challenge.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 3D air-core MEMS inductors for very-high-frequency power conversions

Thanh

Mizushima²,

Nour

et al. 2018

Microsyst Nanoeng

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We report a fabrication technology for 3D air-core inductors for small footprint and very-high-frequency power conversions. Our process is scalable and highly generic for fabricating inductors with a wide range of geometries and core shapes. We demonstrate spiral, solenoid, and toroidal inductors, a toroidal transformer and inductor with advanced geometries that cannot be produced by wire winding technology. The inductors are embedded in a silicon substrate and consist of through-silicon vias and suspended windings. The inductors fabricated with 20 and 25 turns and 280-350 μm heights on 4-16 mm 2 footprints have an inductance from 34.2 to 44.6 nH and a quality factor from 10 to 13 at frequencies ranging from 30 to 72 MHz. The air-core inductors show threefold lower parasitic capacitance and up to a 140% higher-quality factor and a 230% higher-operation frequency than silicon-core inductors. A 33 MHz boost converter mounted with an air-core toroidal inductor achieves an efficiency of 68.2%, which is better than converters mounted with a Si-core inductor (64.1%). Our inductors show good thermal cycling stability, and they are mechanically stable after vibration and 2-m-drop tests.

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Section: Introductionmentioning

confidence: 99%

Fabrication of 3D air-core MEMS inductors for very-high-frequency power conversions

Thanh

Mizushima²,

Nour

et al. 2018

Microsyst Nanoeng

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“…Carbon nanotube (CNT) is the most promising material for very large scale integration interconnects in the future due to their extraordinary electrical, thermal and mechanical properties [1][2][3][4]. Through-silicon via (TSV) providing a vertical connection between chips is the primary technology in three-dimensional integrated circuits (3D ICs) [5][6][7][8]. To further improve the performance of 3D ICs, much research on CNT-based TSV has been done.…”

Section: Introductionmentioning

confidence: 99%

Transmission characteristics of multi‐walled carbon nanotube‐based through‐silicon vias considering temperature effects

Chen

Han

et al. 2017

IET Microwaves, Antennas & Propagation

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In this study, a simplified temperature‐dependent expression of electron mean free path (MFP) is proposed first. Then, the electrical model of multi‐walled carbon nanotube bundle‐based through‐silicon vias (MWCNTB‐TSVs) is established considering the temperature effects of the MFP, metal‐oxide‐semiconductor capacitance, substrate conductance and number of conducting channels of MWCNT. Based on this model, the propagation constant, forward transmission coefficient S21 and crosstalk at different temperatures are calculated. By analysing the phase constant, the zero dispersion transmission condition is obtained. According to this condition, the guidelines on how to select the substrate in different level integrations are proposed. Furthermore, a concise formula for the equivalent conductivity of MWCNTB is proposed. Moreover, the minimum diameter of MWCNTB‐TSV whose attenuation is less than that of copper‐filled TSV has been deduced.

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“…The adoption of this scheme for silicon ICs has already begun and impressive technologies such as through-silicon-via (TSV), monolithic inter-tier-via (MIV), etc. already exist for 3D integration of Si ICs [7,8].…”

mentioning

confidence: 99%

Monolithic three-dimensional (3D) integration of two-dimensional (2D) field effect transistors

Jayachandran

Pendurthi

Trainor

et al. 2023

Preprint

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Three-dimensional (3D) integration is an emerging technology that is revolutionizing the semiconductor industry. On one hand, it enables the packaging of more devices per unit volume, also referred to as “More Moore”, while on the other hand, it empowers multifunctionality, also known as “More than Moore”, both of which are key toward the development of low-cost, energy-efficient, and high-performance smart electronic systems. While silicon-based 3D integrated circuits (ICs) are already commercially available, there is limited effort on 3D integration of emerging nanomaterials such as two-dimensional (2D) materials despite their novel functionalities that may benefit many applications. Here we demonstrate monolithic 3D integration of a large volume (in excess of 600 transistors in each tier) of aggressively scaled field effect transistors (FETs) based on monolayer MoS2 at low-thermal budget (with processing temperature < 185 °C). We also realize 3D circuits and demonstrate multifunctional capabilities including sensing, memory storage, as well as logic gates in any tier across the 3D stack. We believe that our demonstration will pave the path for more sophisticated, highly dense, and functionally divergent ICs with a larger number of tiers integrated monolithically in the third dimension.

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Through-Silicon Vias: Drivers, Performance, and Innovations

Cited by 45 publications

References 96 publications

Fabrication of 3D air-core MEMS inductors for very-high-frequency power conversions

Fabrication of 3D air-core MEMS inductors for very-high-frequency power conversions

Transmission characteristics of multi‐walled carbon nanotube‐based through‐silicon vias considering temperature effects

Monolithic three-dimensional (3D) integration of two-dimensional (2D) field effect transistors

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