THz acoustic phonon spectroscopy and nanoscopy by using piezoelectric semiconductor heterostructures

Mante, Pierre‐Adrien; Yu, Haomiao; Yang, Szu Chi; Liu, Tzu-Ming; Maznev, A. A.; Sheu, Jinn-Kong; Sun, Chi‐Kuang

doi:10.1016/j.ultras.2014.09.020

Cited by 45 publications

(31 citation statements)

References 67 publications

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“…However, for 10 GHz frequency phonon, which is emitted during the spin relaxation, the phonon coherence time is relatively long, it can be more than 10 ns. [52] For a 10 ns coherence time of phonon at 10 GHz frequency, the broadening of phonon spectrum would correspond to a 0.05 Tesla difference in magnetic field, which will not destroy features of spin relaxation hot-spot and cool-spot in this study. Since the interference involves multiple orbital states in both the donor and the QD, one would also require the phonon coherence length to be long enough to support the interference effect.…”

Section: Results For Inter-donor-qd Spin Relaxationmentioning

confidence: 89%

Spin relaxation of a donor electron coupled to interface states

Huang

Bryant

2018

Phys. Rev. B

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An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an interface, where the donor states can be coupled with interface states. Here we study the phonon-assisted spin-relaxation mechanisms when a donor is coupled to confined (quantum-dot-like) interface states. We find that both Zeeman interaction and spin-orbit interaction can hybridize spin and orbital states, each contributing to phonon-assisted spin relaxation in addition to the spin relaxation for a bulk donor or a quantum dot. When the applied magnetic field B is weak (compared to orbital spacing), the phonon assisted spin relaxation shows the B 5 dependence. We find that there are peaks (hot-spots) in the B-dependent and detuning dependent spin relaxation due to strong hybridization of orbital states with opposite spin. We also find spin relaxation dips (cool-spots) due to the interference of different relaxation channels. Qubit operations near spin relaxation hot-spots can be useful for the fast spin initialization and near cool-spots for the preservation of quantum information during the transfer of spin qubits.

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Section: Results For Inter-donor-qd Spin Relaxationmentioning

confidence: 89%

Spin relaxation of a donor electron coupled to interface states

Huang

Bryant

2018

Phys. Rev. B

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“…Other additional mechanisms can have a role in the generation of CAPs, such as the inverse piezoelectric effect25. However, in the case of CH 3 NH 3 PbI 3 , the piezoelectric coefficient e 33 is relatively weak with reported value of 0.07 C m −2 (ref.…”

Section: Resultsmentioning

confidence: 99%

Electron–acoustic phonon coupling in single crystal CH3NH3PbI3 perovskites revealed by coherent acoustic phonons

Mante

Stoumpos²,

Kanatzidis³

et al. 2017

Nat Commun

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118

127

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Despite the great amount of attention CH3NH3PbI3 has received for its solar cell application, intrinsic properties of this material are still largely unknown. Mobility of charges is a quintessential property in this aspect; however, there is still no clear understanding of electron transport, as reported values span over three orders of magnitude. Here we develop a method to measure the electron and hole deformation potentials using coherent acoustic phonons generated by femtosecond laser pulses. We apply this method to characterize a CH3NH3PbI3 single crystal. We measure the acoustic phonon properties and characterize electron-acoustic phonon scattering. Then, using the deformation potential theory, we calculate the carrier intrinsic mobility and compare it to the reported experimental and theoretical values. Our results reveal high electron and hole mobilities of 2,800 and 9,400 cm2 V−1 s−1, respectively. Comparison with literature values of mobility demonstrates the potential role played by polarons in charge transport in CH3NH3PbI3.

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“…This kind of interaction between an acoustic wave and carriers in piezoelectric semiconductors is called the acoustoelectric effect, which is a special case of a more general phenomenon, called wave–particle drag [4–5]. Obviously, acoustoelectric coupling of piezoelectric semiconductors can be used to develop many new microelectronic devices with modern functions, for example piezoelectric field-effect transistors [6–11], piezoelectric charge-coupled devices [12–15], piezoelectric chemical sensors [16–17], and nanogenerators made of vertically aligned ZnO nanowires [18–27]. The principle of nanogenerators is that the piezoelectric potential produced by the piezoelectric effect can produce a current in an external circuit when the ZNW is deformed.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

Liang

Fan

Chen

et al. 2018

Beilstein J. Nanotechnol.

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In piezoelectric semiconductors, electric fields drive carriers into motion/redistribution, and in turn the carrier motion/redistribution has an opposite effect on the electric field itself. Thus, carrier drift in a piezoelectric semiconducting structure is essentially nonlinear unless the induced fluctuation of carrier concentration is very small. In this paper, the nonlinear governing equation of carrier concentration was established by coupling both piezoelectric effect and semiconduction. A nonlinear carrier-drift effect on the performance of a ZnO nanogenerator was investigated in detail and it was elucidated that carrier motion/redistribution occurs in the ZnO nanowire (ZNW) cross section while there is no carrier motion in the axial direction. At the same time, we noted that the amplitude of boundary electric charge grows with increasing deformation, but the peaks of boundary electric charge do not appear at the cross-section endpoints. Thus, in order to effectively improve the performance of the ZNW nanogenerator, the effect of electrode configuration on the piezoelectric potential difference and output power was analyzed in detail. The electrode size for the optimal performance of a ZnO nanowire generator was proposed. This analysis that couples electromechanical fields and carrier concentration as a whole has some referential significance to piezotronics.

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THz acoustic phonon spectroscopy and nanoscopy by using piezoelectric semiconductor heterostructures

Cited by 45 publications

References 67 publications

Spin relaxation of a donor electron coupled to interface states

Spin relaxation of a donor electron coupled to interface states

Electron–acoustic phonon coupling in single crystal CH3NH3PbI3 perovskites revealed by coherent acoustic phonons

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

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