THz electronics for data centre wireless links — The TERAPOD project

Al-Khalidi

IEEE Trans. Microwave Theory Techn.

et al. 2018

The paper reports on a 15 Gbps wireless link that employs a high power resonant tunneling diode (RTD) oscillator as a transmitter. The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The reported performance is over a 50 cm link, with simple amplitude shift keying (ASK) modulation utilized. The 15 Gbps data link shows correctable bit error rate (BER) of 4.1×10-3 , while lower data rates of 10 Gbps and 5 Gbps shows BER of 3.6×10-4 and 1.0×10-6 , respectively. These results demonstrate that the RTD transmitter is a promising candidate for the next generation low cost, compact, ultra-high data rates wireless communication systems. Index Terms-resonant tunneling diode, wireless communication systems, amplitude shift keying, oscillator, high power transmitter.

Section: Introductionmentioning

confidence: 87%

15-Gb/s 50-cm Wireless Link Using a High-Power Compact III–V 84-GHz Transmitter

Al-Khalidi

IEEE Trans. Microwave Theory Techn.

et al. 2018

“…Using (11), the calculated/expected output power as a function of frequency for a single 4 m × 4 m RTD device oscillator is shown in Figure 5 (solid trace). Here, the device parameters ∆V = 0.7 V and ∆I = 25 mA and RS = 2.8  have been used.…”

Section: Oscillator Circuit Output Power and Oscillation Frequencymentioning

confidence: 99%

“…In our recent work, we have reported RTD oscillators with high output powers in the 0.5-1mW range up to 300 GHz [7]- [10]. We have used this technology to demonstrate 15 Gbps wireless links using W-band RTD oscillators [7], and are now developing such links for future wireless data centres [11]. We have also reported millimeter-wave RTD oscillators with very high dc-RF conversion efficiency (>10%), a tenfold improvement on conventional designs (1%) [12].…”

Section: Introductionmentioning

confidence: 99%

Resonant Tunneling Diode Terahertz Sources With up to 1 mW Output Power in theJ-Band

Al-Khalidi

Alharbi

IEEE Trans. THz Sci. Technol.

et al. 2020

Self Cite

Terahertz (THz) oscillators based on resonant tunneling diodes (RTDs) have relatively low output power, tens to hundreds of microwatts. The conventional designs employ submicron sized RTDs to reduce the device self-capacitance and, as a result, realise higher oscillation frequencies. However, reducing the RTD device size leads to lower output power. In this paper we present RTD oscillators which can employ one or two RTD devices of relatively large size, 9-25 µm 2 , for high power and, at the same time, can oscillate at THz frequencies. This is achieved through low resonating inductances realized by microstrip or coplanar waveguide (CPW) transmission line short stubs with low characteristic impedances (Z0), which have lower inductance values per unit length and so compensate the increase of the selfcapacitance of large area RTD devices. Thus, fabrication using only photolithography is possible. It is also shown that device sizing, which is limited only by bias stability considerations, does not limit device bandwidth. Further, we report a new way to estimate the RTD oscillator output power with frequency. A series of oscillators with oscillation frequencies in the 245-309 GHz range and output powers from 0.1-1 mW have been demonstrated showing the feasibility of the proposed approach. Index Terms-Resonant tunnelling diode (RTD), terahertz (THz) sources, photolithography.

IET Circuits, Devices & Systems

“…In recent years, the upper millimetre-wave (mm-wave) or lower terahertz (THz) frequency band between 100 and 300 GHz has attracted a great deal of interest in high-data-rate wireless communication systems [1][2][3]. Resonant tunnelling diodes (RTDs)based signal sources have been utilised as one of key components for short-distance high-data-rate wireless systems serving emerging applications such as chip-to-chip communication, wireless data centres, and high-resolution video signal transmission, in which low dc-power consumption (P DC ) is required [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

225 GHz triple‐push RTD oscillator with 0.5 mW dc‐power consumption

Lee

Kim

Park

et al. 2020

This study reports on a sub-mW triple-push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc-power consumption (P DC) of 0.5 mW with a dc-to-radio-frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm 2 and an efficient triple-push topology exploiting the strong odd symmetry of the RTD I-V curve with a wide negative differential conductance voltage span of 0.46 V.