THz near-field intensity distribution imaging in the 0.3 THz band using a highly sensitive polarization CMOS image sensor using a 0.35 μm CMOS process

Abstract

In this paper, we propose a low-disturbance and fast terahertz (THz) near-field intensity distribution imaging method. The THz detector is fabricated using an oriented multiwalled carbon nanotube (CNT) thin film and a LiNbO3 (LN) crystal to the thin film is attached. The CNT absorbs and converts THz waves into heat, and the birefringence change of the LN crystal owing to the heat is used. The birefringence change was measured with high sensitivity using a dual-polarizer configuration of a uniform polarizer and a polarization CMOS image sensor. Fabricated THz detector is a low-disturbance method because it does not use metal, and it can measure the THz distribution in the plane all at once, which enables faster than the antenna scanning method. Using the proposed method, we have successfully imaged the THz near-field intensity distribution emitted from an impact avalanche and transit time diode oscillating at 0.278 THz.