TiCl₄ surface-treated SnO₂ photoanodes for self-powered UV photodetectors and dye-sensitized solar cells

Preparation of hexagonal nanoporous Al2O3/TiO2/TiN as a novel photodetector with high efficiency

“…The nonlinear relation between light intensity and photocurrent density indicates the complex electron–hole transportation reaction 48 . This confirms the generation of more carriers on the material surface with increasing the light power intensity as a result of increasing excitation of electrons from VB to CB 49 .…”

Cetyltriammonium Bromide Assisted Synthesis of Lanthanum Containing Barium Stannate Nanoparticles for Application in Dye Sensitized Solar Cells

“…Figure (IV) represents the variation of 1/C 2 as a function of voltage of pristine and La (2, 4, and 6 at.%) containing barium stannate nanoparticles at a frequency of 100 Hz. In order to determine the effect of La doping on band edge/Fermi level, the flat band potential (V fb ) is determined from Mott‐Schottky equation as where E is interpolated from linear fitting of the transition region, K is Boltzmann constant, T is temperature and e is the electronic charge . From Figure (d), it is observed that V fb shits toward left with increase in La content.…”

E-beam evaporated hydrophobic metal oxide thin films as carrier transport materials for large scale perovskite solar cells

“…Thin metal-oxide films are essential in developing microelectronic and optoelectronic devices where they could be integrated as buffer layers to control the charge carrier transportation [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. This is due to their suitable electronic, structural and optical properties, where their microstructure and morphology play central and critical roles [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. As studied such metal-oxide films have been practically developed to support nanocomposites cathode in lithiumsulphur battery, nanostructured hybrid solar cells, photocatalytic applications, gas sensors and UV photodetectors.…”

“…In general, inorganic n-type or p-type oxide materials grown at low temperature inside physical vapour deposition process tools offer the advantages of reducing device fabrication cost and enhancing device stability through resistance to moisture. Among inorganic carrier transport materials, few metal oxide materials have demonstrated the capabilities of fulfiling operational device requirements, this includes titanium oxide (TiO x ) [1,2,3], tin oxide (SnO x ) [9,10,11,12,13], molybdenum oxide (MoO x ) [6] and nickel oxide (NiO) [7,8]. Indeed, high carrier mobility and a pristine electrical interface with the absorbing layer are critical requirements to minimise carrier recombination of the device.…”