Tight-Pitched 10 μm-Width Solder Joints for c-2-c and c-2-w 3D-Integration in NCF Environment

Murugesan, M.; Fukuzumi, Shizu; Shibata, Tetsuichi; Hashimoto, Hiroyuki; Bea, J. C.; Koyanagi, Mitsumasa; Fukushima, Takafumi

doi:10.1109/ectc51906.2022.00184

Cited by 6 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Currently, the most advanced bump bonding used for commercial products owns a 40 µm pitch and 20 µm bump size [1]. In order to meet the rapidly increased input and output number in the high-end devices, researchers are engaging in the development of fine pitch bump bonding (less than 40 µm) as well as the availability of them in a realistic application [2,3].…”

Section: Introductionmentioning

confidence: 99%

20 μm Copper Micro-Bump Bonding Through a Silver Metallization for Advanced Packaging Under a Low Pressure Condition

Zhang,

Hsieh,

Suetake

et al. 2024

IMAPSource Proceedings

View full text Add to dashboard Cite

In this work, we proposed a copper (Cu) microbump bonding strategy by using a silver (Ag) metallization layer as an interconnect bridge. Si chips with 20 μm Cu-Ag bumps were bonded under a low pressure (0.4 MPa) and atmospheric conditions at 250 °C. By investigating the surface morphology evolution of the Cu-Ag bump, it is found that severe surface deformation caused by Ag abnormal grain growth and hillock generation plays a critical role in the Cu-Ag bump bonding, which facilitates the approach and bonding of top and bottom Ag surface of the bump structure. Moreover, this bonding strategy is expected to be particularly advantageous for finepitch interconnect applications. It not only mitigates the severe bonding condition requirements that are used in thermal compression bonding and hybrid bonding, but also provides higher quality bonding structures for advanced packaging.

show abstract

Section: Introductionmentioning

confidence: 99%