Tilted Beam Piezoresistive Displacement Sensor: Design, Modeling, and Characterization

Abstract

Abstract-We present a comprehensive study of the design, modeling, and characterization of an on-chip piezoresistive displacement sensor. The design is based on the bulk piezoresistivity of tilted clamped-guided beams without the need for additional steps to generate doped regions. The sensor is implemented in a one-degree-of-freedom microelectromechanical system (MEMS) nanopositioner, where the beams also function as the suspension system. A standard MEMS fabrication process is used to realize the device on single-crystalline silicon as the structural material. The beams are oppositely tilted to develop tensile and compressive axial forces during stage movement, creating a differential sensing feature. An analytical approach is proposed for modeling and design of the tilted clamped-guided beams. The linearity of the sensor in the differential configuration is investigated analytically. The static, dynamic, and noise characteristics of the sensor are presented, followed by a model-based investigation of the measured dynamic feedthrough.[ 2015-0030]Index Terms-Piezoresistive displacement sensor, MEMS nanopositioner, tilted clamped-guided beam, buckling, negative stiffness.

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“…The high-pass damping loop reduces the effect of 1/f noise inherent to the piezoresistive sensors. 26 The sensor data are filtered using a Kaiser window low-pass filter with a cut-off frequency of 15 kHz and a stop band attenuation of 60 dB. Figures 9(c) and 9(d) show the filtered error in each axis.…”

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“…The sensitivity that was measured was 0.8 mV/V/mN. In regard to measuring the displacement, a piezoresistive displacement sensor was designed for a microelectromechanical system (MEMS) nanopositioner [ 32 ]. In this design, a single-crystalline silicon was used as the structural material.…”