Tilting in the arsenic-inducedc(4×4) reconstruction of the GaAs{001} surface

Surface structure of GaAs(0 0 1)-c(4 × 4) studied by LEED intensity analysis

“…1b (two mirror planes parallel to the [1 1 0] and ½ 1 1 0 directions, respectively). Numerous theoretical and experimental studies have been done based on this model [6][7][8][9][10][11][12][13][14]. However, besides one exception [15], to our knowledge, scanning tunneling microscopy (STM) images reported so far on the c(4 · 4) surface did not manifest clearly the 2 mm symmetry [9][10][11]16].…”

“…doi:10.1016/j.susc. 2004.06.198 It has been generally accepted [6][7][8][9][10][11][12][13][14] that the c(4 · 4) surface has a structure which contains three excess As-As dimers per unit cell on top of an Asterminated bulk-like surface and possesses 2 mm symmetry as shown in Fig. 1b (two mirror planes parallel to the [1 1 0] and ½ 1 1 0 directions, respectively).…”

Arsenic-rich GaAs(0 0 1) surface structure

“…A combined temperature programmed desorption (TPD) and RHEED study achieved a very accurate determination of the coverage range of the c(4 Â 4) surface of 1.28-1.61 ML suggesting that a mixture of the one-dimer and the three-dimer structure is present on the surface [58]. Using shadow-cone-enhanced secondary-ion mass spectrometry (SIMS) Xu et al conclude that the three As-dimer model contains both tilted and untilted dimers [59].…”

Epitaxy and stress of MgO/GaAs(001) heterostructures

“…Best results were achieved by preparing a GaAs(001) buffer layer by standard molecular beam epitaxy (MBE). 26 Here, we report on the growth of epitaxial MgO(001) films on GaAs(001) at low temperatures with low misfit. In addition to structural and morphological results, we present in situ stress measurements that provide direct information on the growth mechanism and strain relaxation of the MgO films.…”