Time dependence of electrical characteristics during the charge decay from a single gold nanoparticle on silicon

Nonvolatile memory technology is a necessary component in many electronic devices. With the scaling down of memory devices to achieve high density and low power consumption, floating gate devices encounter various challenges like high leakage current, which leads to reliability issues and a decrease in charge density. Therefore, the use of metal nanoparticles (NPs) as charge storage centers is becoming a promising candidate due to their excellent scalability and favorable reliability. In this work, we demonstrate the charge storage dependency on the size of a gold-nanoparticle (Au-NP) by using a contact mode atomic force microscope. The individually dispersed Au-NPs are sandwiched between a thin layer (3 nm) of TiO2 blocking layer and SiO2 (2 nm) tunneling layer thin films. The consecutive I–V sweeps on a pristine device of stacking TiO2/Au-NP/SiO2/n-Si show that the threshold voltage (ΔV) increases with the increase in the Au-NP size, whereas the retention shows much more stability time with smaller size NPs, in the range of 10 nm.

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Time dependence of electrical characteristics during the charge decay from a single gold nanoparticle on silicon

Abstract: In this work, we investigate the time dependence of trapped charge in isolated gold nanoparticles (Au-NPS) dispersed on n-Si substrates, based on the electrical characteristics of nano metal–semiconductor junctions.

Cited by 4 publications

References 33 publications

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