1994
DOI: 10.1103/physrevb.49.7299
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Time dependence of the laser-induced femtosecond lattice instability of Si and GaAs: Role of longitudinal optical distortions

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Cited by 226 publications
(144 citation statements)
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“…Silicon is a widely studied material in the context of strongly driven phase transitions, both experimentally [1][2][3][4][5][6] and theoretically [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29], where it is found to melt on a subpicosecond timescale at high excitations. Most theoretical studies of nonthermal melting in silicon have employed ab initio simulation methods.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon is a widely studied material in the context of strongly driven phase transitions, both experimentally [1][2][3][4][5][6] and theoretically [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29], where it is found to melt on a subpicosecond timescale at high excitations. Most theoretical studies of nonthermal melting in silicon have employed ab initio simulation methods.…”
Section: Introductionmentioning
confidence: 99%
“…Similar behavior has been observed in the case of femtosecond optical excitation 6,7 and attributed to nonthermal melting. 8 Although the temporal resolution in the experiment discussed here was limited by the probe pulse duration to 10 ps, the observed increase of the reflectivity most likely occurs on subpicosecond time scales and is similarly related to an electronically induced phase transition.…”
mentioning
confidence: 99%
“…This is sometimes referred to as non-thermal melting. Already 20 years ago it was found that the optical properties of the surface change from that of a solid to that of the liquid in a few 100 fs [36]. In a pioneering study by Rousse et al [1] the lattice disordering was directly measured to atomic pathways have not been possible to deduce in this and subsequent studies using laser-produced plasma sources.…”
Section: Non-thermal Melting Of Insbmentioning
confidence: 99%