2010
DOI: 10.1063/1.3475566
|View full text |Cite
|
Sign up to set email alerts
|

Time-dependent density functional theory for quantum transport

Abstract: Based on our earlier works [X. Zheng et al., Phys. Rev. B 75, 195127 (2007); J. S. Jin et al., J. Chem. Phys. 128, 234703 (2008)], we propose a rigorous and numerically convenient approach to simulate time-dependent quantum transport from first-principles. The proposed approach combines time-dependent density functional theory with quantum dissipation theory, and results in a useful tool for studying transient dynamics of electronic systems. Within the proposed exact theoretical framework, we construct a numbe… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
141
0

Year Published

2011
2011
2023
2023

Publication Types

Select...
6
1

Relationship

3
4

Authors

Journals

citations
Cited by 101 publications
(141 citation statements)
references
References 57 publications
0
141
0
Order By: Relevance
“…[20][21][22][23][24][25][26][27][28][29][31][32][33][34] We first solve the steady-state equations of DFT and mean-field theory to determine the parameter range for bistability. Then we go beyond the current state-of-the-art and provide a TD description of the bistability phenomenon in adiabatic TDDFT [23][24][25][26][27][28][29] and TD mean-field theory. We show how to switch between different stable states by means of ultrafast gate voltages or external biases (driving fields).…”
Section: Introductionmentioning
confidence: 99%
“…[20][21][22][23][24][25][26][27][28][29][31][32][33][34] We first solve the steady-state equations of DFT and mean-field theory to determine the parameter range for bistability. Then we go beyond the current state-of-the-art and provide a TD description of the bistability phenomenon in adiabatic TDDFT [23][24][25][26][27][28][29] and TD mean-field theory. We show how to switch between different stable states by means of ultrafast gate voltages or external biases (driving fields).…”
Section: Introductionmentioning
confidence: 99%
“…From the figure we see that there exist large oscillations in the beginning, which is the over-shotting effect. This is due to the very narrow spectrum of the lead [16]: Only a small amount of electron near the Fermil level can be disspated into the GNR lead, so most of the electron wave 13 injected in the device is reflected on the device-lead boundary, which gives the oscillation current.…”
Section: B Graphene Nanoribbon System (Tb Model)mentioning
confidence: 99%
“…We opt for another method. Instead of solving the EOM of the Green's functions, new matrices are defined as follows: [13] and [14]. These differential equations constitute a closed set of hierarchical equations, which is exact and solvable.…”
Section:  mentioning
confidence: 99%
See 2 more Smart Citations