Time dependent density of free carriers generated by two photon absorption in silicon waveguides

Liu, Y.; Tsang, Hon Ki

doi:10.1063/1.2741611

Cited by 51 publications

(17 citation statements)

References 11 publications

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“…The TPA coefficient allows evaluation of the TPA‐induced free‐carrier density. In particular, for an integrated silicon‐based optical device, the free‐carrier density N(z) at position z is given by :

N (z) = β \frac{λ τ_{italiceff}}{2 hv} \frac{P^{2} (z)}{A_{italiceff}^{2}}

where P(z) is the propagating power at position z , λ is the wavelength of the optical beam, hν is the photon energy, A eff is the effective area of the waveguide ‐ and τ eff is the effective free‐carrier lifetime. The last parameter depends on the geometry and size of the silicon waveguide.…”

Section: Silicon Sub‐bandgap Photo‐detection Mechanismsmentioning

confidence: 97%

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State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths

Casalino

Coppola

Rue

et al. 2016

Laser & Photonics Reviews

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Silicon-based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption -due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection above 1.1 µm, in recent years tremendous advances have been achieved in the field of all-silicon subbandgap photodetectors at telecom and datacom wavelengths -by taking advantage of new emerging materials and structures. In this paper, a review of the state of the art is presented.Devices based on defect-mediated absorption, two-photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared.

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N (z) = β \frac{λ τ_{italiceff}}{2 hv} \frac{P^{2} (z)}{A_{italiceff}^{2}}

Section: Silicon Sub‐bandgap Photo‐detection Mechanismsmentioning

confidence: 97%

“…The TPA coefficient allows evaluation of the TPAinduced free-carrier density. In particular, for an integrated silicon-based optical device, the free-carrier density N(z) at position z is given by [71]:…”

Section: Two-photon Absorption (Tpa)mentioning

confidence: 99%

State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths

Casalino

Coppola

Rue

et al. 2016

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…Thanks to the high Q-factor of the FP cavity and the MRR, their strong light-confinement capacity would strengthen the TPA-induced nonlinear thermal-optic effect [20], which would finally affect the coupling between the MRR and the FP cavity. Therefore, by varying the power of the pumping light, the Fano resonance is tuned.…”

Section: Lettermentioning

confidence: 99%

Optically tunable Fano resonance in a grating-based Fabry–Perot cavity-coupled microring resonator on a silicon chip

Zhang

Yao

2016

Opt. Lett.

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A grating-based Fabry-Perot (FP) cavity-coupled microring resonator on a silicon chip is reported to demonstrate an all-optically tunable Fano resonance. In the device, an add-drop microring resonator (MRR) is employed, and one of the two bus waveguides is replaced by an FP cavity consisting of two sidewall Bragg gratings. By choosing the parameters of the gratings, the resonant mode of the FP cavity is coupled to one of the resonant modes of the MRR. Due to the coupling between the resonant modes, a Fano resonance with an asymmetric line shape resulted. Measurement results show a Fano resonance with an extinction ratio of 22.54 dB, and a slope rate of 250.4 dB/nm is achieved. A further study of the effect of the coupling on the Fano resonance is performed numerically and experimentally. Thanks to the strong light-confinement capacity of the MRR and the FP cavity, a strong two-photon absorption induced nonlinear thermal-optic effect resulted, which is used to tune the Fano resonance optically.

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“…34 If an external electric field E dc is used for sweep carriers away, change in the free carrier density N is given by continuity equation Where q is the electron charge and G and R are free carriers generation and recombination rate respectively. Electrical current flow in semiconductors is mainly dominated by drift and diffusion of electrons and holes.…”

Section: Drift-diffusion Modelmentioning

confidence: 99%

Compound FDTD method for silicon photonics

Olyaee

Hamadani

2011

AIP Advances

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Attempt to manufacture photonics devices on silicon requires theoretical and numerical prediction. This essay presents Compound FDTD (C-FDTD) method for comprehensive simulation of silicon photonics devices. Although this method is comprehensive, it maintains conventional Yee algorithm. The method involves variation of refractive index due to nonlinear effects. With the help of this simulator, refractive index change due to free-carriers created through two photon absorption and Kerr effect in silicon waveguide is considered. Results indicate how to choose pump pulse shape to optimum operation of active photonics devices. Also conductivity variation of Si waveguide due to change in free-carrier density is studied. By considering variations in conductivity profile, we are able to design better schemes for sweep free carriers away with reverse bias or nonlinear photovoltaic effect for fast devices and Raman amplifiers

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Time dependent density of free carriers generated by two photon absorption in silicon waveguides

Cited by 51 publications

References 11 publications

State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths

State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths

Optically tunable Fano resonance in a grating-based Fabry–Perot cavity-coupled microring resonator on a silicon chip

Compound FDTD method for silicon photonics

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