Abstract:When nanometer-sized devices are subjected to identical stresses, their degradation has a statistical spread, resulting in a time-dependent device-to-device variation (TDDV). The variation has two sources: charging fluctuation for a given number and location of defects and a variation in defect numbers and locations for different devices. The existing measurement techniques do not separate these two and can underestimate the aging by not capturing all defects. There is a need for a new technique that can chara… Show more
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