2021
DOI: 10.1109/ted.2021.3097695
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Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

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Cited by 3 publications
(4 citation statements)
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“…The l/f noise was measured using the E4727A Advanced Low-Frequency Noise Analyzer together with B1500A from Keysight. 2(c) indicate that the 1/f noise spectra remain nearly unchanged, which haves been previously reported [8]. Fig.…”
Section: Methodssupporting
confidence: 83%
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“…The l/f noise was measured using the E4727A Advanced Low-Frequency Noise Analyzer together with B1500A from Keysight. 2(c) indicate that the 1/f noise spectra remain nearly unchanged, which haves been previously reported [8]. Fig.…”
Section: Methodssupporting
confidence: 83%
“…Fig.2(a) and (b) illustrate the Auger HCs induced DC characteristic variations in Gummel-Poon (G-P) and current gain degradation curves in PE-BJTs. SIB curves shown in Fig.2(c) indicate that the 1/f noise spectra remain nearly unchanged, which haves been previously reported[8]. Fig.2(d), (e) and (f) exhibit the corresponding G-P curves, current gain curves and noise spectra of the PE-BJTs before and after MM stress.…”
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confidence: 81%
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