Time dependent preferential sputtering in the HfO2 layer on Si(100)

Chang, Shih-Chin; Lee, W.C.; Hwang, Jiann Yang; Hong, M.; Kwo, J.

doi:10.1016/j.tsf.2007.06.007

Cited by 19 publications

(12 citation statements)

References 22 publications

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“…23 This shoulder can be attributed to hafnium in the metallic state and hafnium suboxide HfO x (x < 2). [24][25][26] Thus, the presence of oxygen vacancies in the studied non-stoichiometric hafnia film can be inferred without doubt.…”

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confidence: 87%

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

Перевалов

Алиев

Gritsenko

et al. 2014

Applied Physics Letters

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The origin of a blue luminescence band at 2.7 eV and a luminescence excitation band at 5.2 eV of hafnia has been studied in stoichiometric and non-stoichiometric hafnium oxide films. Experimental and calculated results from the first principles valence band spectra showed that the stoichiometry violation leads to the formation of the peak density of states in the band gap caused by oxygen vacancies. Cathodoluminescence in the non-stoichiometric film exhibits a band at 2.65 eV that is excited at the energy of 5.2 eV. The optical absorption spectrum calculated for the cubic phase of HfO 2 with oxygen vacancies shows a peak at 5.3 eV. Thus, it could be concluded that the blue luminescence band at 2.7 eV and HfO x excitation peak at 5.2 eV are due to oxygen vacancies. The thermal trap energy in hafnia was estimated. V

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mentioning

confidence: 87%

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

Перевалов

Алиев

Gritsenko

et al. 2014

Applied Physics Letters

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“…A similar phenomenon has been reported in the literature where Ar þ sputtering on HfO 2 film causes preferential sputtering of O with respect to Hf and thus, non-stoichiometric composition is obtained by depth profiling. [22] Full Paper In order to clarify the chemical states of elements on the surface of the films, the XPS measurements were carried out and the deconvoluted spectra of Hf 4f, O 1s, and C 1s are shown in Figures 8a-c, respectively. The analysis of Hf 4f spectra reveals the presence of a double peak structure with spin orbit splitting 1.6 eV, and the area ratio between components of 1.3 in both samples.…”

Section: Hfo 2 Film Characterizationmentioning

confidence: 99%

Atomic Layer Deposition of HfO₂ Thin Films Employing a Heteroleptic Hafnium Precursor

Milanov

Parala

et al. 2012

Chemical Vapor Deposition

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The application of a heteroleptic hafnium amide-guanidinate precursor for the deposition of HfO 2 thin films via a water-assisted atomic layer deposition (ALD) process is demonstrated for the first time. HfO 2 films are grown in the temperature range 100-300 8C using the compound [Hf(NMe 2 ) 2 (NMe 2 -Guan) 2 ] (1). This compound shows self-limiting ALD-type growth characteristics with growth rates of the order of 1.0-1.2 Å per cycle in the temperature range 100-225 8C. The saturation behavior and a linear dependence on film thickness as a function of number of cycles are verified at various temperatures within the ALD window. The as-deposited HfO 2 films are characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and electrical measurements. For a direct comparison of the precursor performance with that of the parent alkyl amide [Hf(NMe 2 ) 4 ] (2), ALD experiments are also performed employing compound 2 under similar process conditions, and in this case no typical ALD characteristics are observed.

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“…As shown in Fig. 2 a , the binding energies of Hf4f7/2 and Hf4f5/2 are fixed at 16.8 and 18.4 eV, respectively, which have been assigned to be emitted from the Hf4+ ions in the HfO 2 structural configuration [10, 11]. It indicated that a certain portion of Hf atoms has been fully oxidised.…”

Section: Resultsmentioning

confidence: 99%

Micromachined catalytic combustion type gas sensor for hydrogen detection

2013

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A catalytic combustion hydrogen sensor has been fabricated using the microelectromechanical system technology. The application of hafnium oxide thin films as the insulating layer has been deposited by electron beam evaporation. The semiconductor combustion catalyst tin oxide layer was prepared by chemical vapour deposition. It is a novel application of semiconductor material to a catalytic combustion gas sensor. The resistivity of hafnium dioxide thin film is about 3 × 10 12 Ω cm at 900°C. Both the sensing elements and the reference elements could be connected in a suitable circuit such as a Wheatstone configuration with low power consumption. The catalytic combustion sensor shows high response to hydrogen at an operating voltage of 4 V and has a higher relative sensitivity and a good linearity for concentrations of hydrogen ranging from 0 to 4% in volume. Good consistency and high accuracy of the micromachined catalytic combustion gas sensor were achieved.

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Time dependent preferential sputtering in the HfO2 layer on Si(100)

Cited by 19 publications

References 22 publications

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

Atomic Layer Deposition of HfO₂ Thin Films Employing a Heteroleptic Hafnium Precursor

Micromachined catalytic combustion type gas sensor for hydrogen detection

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Time dependent preferential sputtering in the HfO2 layer on Si(100)

Cited by 19 publications

References 22 publications

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor

Micromachined catalytic combustion type gas sensor for hydrogen detection

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Product

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Atomic Layer Deposition of HfO₂ Thin Films Employing a Heteroleptic Hafnium Precursor