A model is developed for electron-ion recombination in a gas capacitor
in which the cathode is irradiated simultaneously by an electron beam
and a defocused flux of soft-landing ions, under conditions such as
encountered in variable pressure scanning electron microscopes (SEMs).
The model describes the dependence of the secondary electron (SE)
emission current (injected into the gas from the cathode) on the
distance above the cathode, and the effects of SE-ion recombination on
electron imaging signals utilized in SEMs. The model is tested
experimentally, and is used to construct a simple procedure for
quantification of the effects of SE-ion recombination on emissive
signals in a gas capacitor. The presented method allows for
quantification of electron emission current measurements obtained in a
variable pressure SEM.