Time Domain Analysis of Hole Trapping Effect in Avalanche Photodiode Using Schrödinger’s Equation

Wu, Zhiwei; Tu, Junjie; Tian, Yuchong; Guo, Jingshu; Li, Yuan; Zhao, Yanli

doi:10.1109/led.2017.2672568

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2017

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“…SAGM-APDs based on III-As alloys have already been employed for carrier build-up in multiplication region and reduction of dark current and excess noise factor [12] [13]. Compared with other proposals, in the proposed structure, difference between electron and hole impact ionization coefficients is compensated by broken multiplication regions.…”

Section: Introductionmentioning

confidence: 99%

A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode

Bagheriyeh-Behbahani¹,

Soroosh²,

Farshidi³

2017

OPJ

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In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/Al x Ga 1-x N/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.

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Section: Introductionmentioning

confidence: 99%