Time-domain calculations of shift currents in bulk GaAs

Podzimski, Reinold; Duc, Huynh Thanh; Meier, Torsten

doi:10.1117/12.2078123

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…The framework in which we describe the charge generation is Optical Bloch equations (OBE's) [30] which were expanded to the semiconductors in works [31][32][33][34][35]. In these works, OBE's have been successfully applied to the cases of charge and spin currents in semiconductors and their heterostructures.…”

Section: Optical Bloch Equationsmentioning

confidence: 99%

Optically induced currents in dielectrics and semiconductors as a nonlinear optical effect

Khurgin

2015

J. Opt. Soc. Am. B

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We demonstrate theoretically that when well-below-the-bandgap femtosecond optical pulses propagate through a dielectric or semiconductor, DC current and charges are produced even though no real carriers are excited in the bands. The photo-induced current is a new ultra-fast nonlinear optical effect based on multi-photon quantum interference and creation of an asymmetric distribution of virtual carriers in the conduction and valence bands. We establish an unambiguous connection between the nonlinear optical conductivity responsible for the photo-induced DC currents and charges and the odd-order nonlinear optical susceptibilities of the material. We then apply our results to the recent experiments [1] in which photo-induced charges have been observed in SiO2 irradiated by belowthe-gap ultra-short optical pulses. Using a single well known measured value of the third order susceptibility (nonlinear index) of SiO2 we obtain excellent agreement with all the experimental data of [1]. A clear physical picture of the origin of the photo-induced currents and charges shows that the versatility of ultrafast (virtual) nonlinear optical phenomena extends even further than had been previously thought.

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Section: Optical Bloch Equationsmentioning

confidence: 99%

Optically induced currents in dielectrics and semiconductors as a nonlinear optical effect

Khurgin

2015

J. Opt. Soc. Am. B

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Quantum interference control of electrical currents in GaAs microstructures: physics and spectroscopic applications

et al. 2016

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Anisotropic excitons and their contributions to shift current transients in bulk GaAs

2017

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Shift current transient are obtained for near band gap excitation of bulk GaAs by numerical solutions of the semiconductor Bloch equations in a basis obtained from a 14 band k·p model of the band structure. This approach provides a transparent description of the optically induced excitations in terms of interband, intersubband, and intraband excitations which enables a clear distinction between different contributions to the shift current transients and fully includes resonant as well as off-resonant processes. Using a geodesic grid in reciprocal space in our numerical solutions, we are able to include the electron-hole Coulomb attraction in combination with our anisotropic three-dimensional band structure. We obtain an excitonic absorption peak and an enhancement of the continuum absorption and demonstrate that the excitonic wave function contains a significant amount of anisotropy. Optical excitation at the excitonic resonance generates shift current transients of significant strength, however, due to the electron-hole attraction the shift distance is smaller than for above band gap excitation. We thus demonstrate that our approach is able to provide important information on the ultrafast electron dynamics on the atomic scale.

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Time-domain calculations of shift currents in bulk GaAs

Cited by 3 publications

References 21 publications

Optically induced currents in dielectrics and semiconductors as a nonlinear optical effect

Optically induced currents in dielectrics and semiconductors as a nonlinear optical effect

Quantum interference control of electrical currents in GaAs microstructures: physics and spectroscopic applications

Anisotropic excitons and their contributions to shift current transients in bulk GaAs

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