Time-Domain Characterization of High-Speed Mid-Infrared Photodetectors Using a Laser-Based Non-Linear Vector Network Analyzer System

Żbik, Mateusz; Szatkowski, Jaroslaw; Wiatr, Wojciech

doi:10.23919/mikon48703.2020.9253839

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…at 4.1 V of the total reverse bias, where k is the Boltzmann constant, T is the operating temperature in K, assumed to equal 300 K, and e is the electron charge. A similar resistance is obtained using small signal reflectance measurements with a vector network analyzer [22], performed at frequencies ranging from 1 kHz to beyond the upper corner frequency of the detector. The latter method allows the lumped parameters of the detector equivalent circuit from Figure 5 to be determined.…”

Section: Device Characterizationmentioning

confidence: 64%

Ultra-thin uncooled integrable-on-chip detector to measure wide infrared radiation residue in lithography exposure and metrology inspection tools

Jahangiri

Pawluczyk

Dąbrowski

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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In modern nano-scale lithography, an essential role of the source, the illumination, and projection lenses is to deliver the precise amount of energy at a specific wavelength to the photoresist deposited on a wafer surface during exposure. Unfortunately, the source of the most advanced lithography processes may produce unwanted infrared components passing through the illumination and projection lenses and reaching the wafer surface. These infrared residues can cause local heating resulting in deformation of the optical elements and the exposed wafer, thus causing deterioration of the image quality. Some infrared spectrum components are in the band from 2 μm to 12 μm. An infrared detector that can measure only these spectral components of the exposure beam, without being affected by the much more powerful exposure spectral component, is helpful for optics diagnostic purposes and improving imaging quality. In this paper, an ultra-thin uncooled integrable-on-chip linear array infrared detector to measure the band of 2-12 μm infrared radiation is designed and fabricated based on the photovoltaic multiple junction heterostructure from VIGO Photonics, made of a HgCdTe narrow bandgap semiconductor. Features such as zero bias, low noise, and fast response, together with a wide active window, make the detector unique for use in the mid-infrared band. Besides lithography applications, the new detector can be useful in testing, inspection, and equipment using infrared sources such as: He-Ne lasers (0.6 to 4 μm), STEAM lasers (2 to 200 μm), CO2 lasers (5 to 11 μm), InGaAsP lasers (0.8 to 3 μm), and PbSnTe (3 to 20 μm) and PbSnSe (7 to 40 μm) lasers.

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Section: Device Characterizationmentioning

confidence: 64%

Ultra-thin uncooled integrable-on-chip detector to measure wide infrared radiation residue in lithography exposure and metrology inspection tools

Jahangiri

Pawluczyk

Dąbrowski

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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show abstract

“…The parallel capacitance C p scales proportionally to the photodiode photosensitive area and was only estimated from measurements of some reverse biased photodiodes, much smaller than the PSD photodiode and made of wafers similar to those used for this PSD. These were time response measurements using fast-decay laser pulses [ 22 , 58 , 59 ] as well as small-signal reflectance measurements with the vector network analyzer [ 60 ]. The C p was estimated to be ca.…”

Section: Parameters Of the Detector’s Equivalent Circuitmentioning

confidence: 99%

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

Pawluczyk

Żbik

Piotrowski

2023

Sensors

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We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive area of 1 × 1 mm2, operating at 205 K in the 3–11 µm spectral range, capable of achieving a position resolution of 0.3–0.6 µm using 10.5 µm 2.6 mW radiation focused on a spot of the 1/e2 diameter 240 µm, with a box-car integration time of 1 µs and correlated double sampling.

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A Self-Calibration of Leaky VNA System for In-Fixture Measurements

Żbik,

Wiatr

2023

IEEE Trans. Microwave Theory Techn.

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Time-Domain Characterization of High-Speed Mid-Infrared Photodetectors Using a Laser-Based Non-Linear Vector Network Analyzer System

Cited by 3 publications

References 15 publications

Ultra-thin uncooled integrable-on-chip detector to measure wide infrared radiation residue in lithography exposure and metrology inspection tools

Ultra-thin uncooled integrable-on-chip detector to measure wide infrared radiation residue in lithography exposure and metrology inspection tools

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

A Self-Calibration of Leaky VNA System for In-Fixture Measurements

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