Time-domain measurements reveal spatial aberrations in a sub-surface two-photon microscope

Rutkauskas, Marius; Reid, Derryck T.; Garduño-Mejı́a, Jesús; Rosete-Aguilar, Martha

doi:10.1364/ao.56.005047

Cited by 4 publications

(1 citation statement)

References 20 publications

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“…Therefore, it offers many possibilities to visualize the internal structure of silicon ICs with high 3D spatial resolution (Ramsay et al, 2005; Ramsay, Serrels, et al, 2007). Another application of 2P OBIC using a SIL is found in the time‐domain measurements of pulse duration and two‐photon autocorrelation trace in a CMOS ICs that can be manipulated to minimize the chromatic and spherical aberrations in a nonlinear microscopy system (Rutkauskas et al, 2017). It reveals that the minimum pulse duration and maximum autocorrelation amplitude is attained by optimizing the objective lens position and the illumination wavefront, which could result in the best spatial resolution.…”

Section: Microscopic Measurements Of Obicmentioning

confidence: 99%

An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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Laser scanning optical beam induced current (OBIC) microscopy has become a powerful and nondestructive alternative to other complicated methods like electron beam induced current (EBIC) microscopy, for high resolution defect analysis of electronic devices. OBIC is based on the generation of electron–hole pairs in the sample due to the raster scanning of a focused laser beam with energy equal or greater than the band gap energy and synchronized detection of resultant current profile with respect to the beam positions. OBIC is particularly suitable to localize defect sites caused by metal–semiconductor interdiffusion or electrostatic discharge (ESD). OBIC signals, thus, are capable of revealing the parameters/factors directly related to the reliability and efficiency of the electronic device under test (DUT). In this review, the basic principles of OBIC microscopy strategies and their notable applications in semiconductor device characterization are elucidated. An overview on the developments of OBIC microscopy is also presented. Specifically, the recent progresses on the following three OBIC measurement strategies have been reviewed, which include continuous laser based single photon OBIC, pulsed laser based single photon OBIC, and multiphoton OBIC microscopy for three‐dimensional mapping of photocurrent response of electronic devices at high spatiotemporal resolution. Challenges and future prospects of OBIC in characterizing complex electronic devices are also discussed. Highlights Characterization of electronic device quality is of paramount importance. Optical beam induced current (OBIC) microscopy offers spatially resolved mapping of local electronic properties. This review presents the principle and notable applications of OBIC microscopy.

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Section: Microscopic Measurements Of Obicmentioning

confidence: 99%

An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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Low-energy/pulse response and high-resolution-CMOS camera for spatiotemporal femtosecond laser pulses characterization @ 1.55 μm

Zapata-Farfan

Contreras-Martínez

Rosete-Aguilar

et al. 2019

Review of Scientific Instruments

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In this work, we present a commercial CMOS (Complementary Metal Oxide Semiconductor) Raspberry Pi camera implemented as a Near-Infrared detector for both spatial and temporal characterization of femtosecond pulses delivered from a femtosecond Erbium Doped Fiber laser (fs-EDFL) @ 1.55 µm, based on the Two Photon Absorption (TPA) process. The capacity of the device was assessed by measuring the spatial beam profile of the fs-EDFL and comparing the experimental results with the theoretical Fresnel diffraction pattern. We also demonstrate the potential of the CMOS Raspberry Pi camera as a wavefront sensor through its a nonlinear response in a Shack-Hartmann array and for the temporal characterization of the femtosecond pulses delivered from the fs-EDFL through TPA Intensity autocorrelation measurements. The direct pulse detection and measurement, through the nonlinear response with a CMOS, is proposed as a novel and affordable high-resolution and high-sensitivity alternative to costly detectors such as CCDs, wavefront sensors and beam profilers @ 1.55 µm. The measured fluence threshold, down to 17.5 µJ/cm2, and pJ/pulse energy response represents the lowest reported values applied as a beam profiler and a TPA Shack-Hartmann wavefront sensor, to our knowledge.

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Novel technique for 2D temporal femtosecond laser pulses characterization

Bravo-Hernández

Reyna-Morales

Delgado-Aguillón

et al. 2020

2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

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Time-domain measurements reveal spatial aberrations in a sub-surface two-photon microscope

Cited by 4 publications

References 20 publications

An insight into optical beam induced current microscopy: Concepts and applications

An insight into optical beam induced current microscopy: Concepts and applications

Low-energy/pulse response and high-resolution-CMOS camera for spatiotemporal femtosecond laser pulses characterization @ 1.55 μm

Novel technique for 2D temporal femtosecond laser pulses characterization

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