Time‐domain signal and noise modelling and analysis of millimetre‐wave and THz high electron mobility transistors

Abstract

This study presents the simultaneous signal and noise modelling and analysis of mmwave/THz high electron mobility transistors (HEMTs) in the linear regime as stochastic active multi-conductor transmission lines (SAMTLs). For such devices, stochastic inhomogeneous telegrapher equations of SAMTLs are extracted assuming the domination of the quasi-transverse electromagnetic mode. Analytical solutions for these equations do not exist. So a numerical analysis of such equations is introduced here at millimetrewave and terahertz frequencies. These equations are analysed with a numerical method in the time domain, namely the finite-integration technique. A semi-distributed model in the advanced design system commercial software is used to validate the numerical results. Also, the results of noise figure and scattering parameters (S-parameters) for the metalsemiconductor field-effect transistor transistor, which has the same SAMTLs model as the HEMT transistor, are compared with the measurement reports at microwave frequencies.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.