Time-domain simulation of CMOS compatible micro-disk lasers

Abstract

We present a numerical framework for the simulation of lasers in the time domain. The algorithm is based on the finitedifference time-domain method, which has been extended to include material gain by using auxiliary differential equations for a frequency dependent conductivity. The algorithm is applied to the simulation of micro-disk lasers based on an erbium doped SiO 2 material system in order to obtain a CMOS compatible fabrication process. Lasing behavior and lasing threshold is studied in two and three dimensions for single and multi-disk systems.