Time evolution of ion energy distributions for plasma doping

Agarwal, Ankur; Kushner, Mark J.

doi:10.1109/tps.2005.845887

Cited by 8 publications

(8 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Introductionmentioning

confidence: 99%

“…Over the past few years, several theoretical studies [18,19] and experimental researches [1,15,16,20] have been published on a pulse-biased ICP. Agarwal et al [18] applied a 2D hybrid model, and they found that the time averaged ion energy angular distribution (IEAD) was characterized by multi-energy structures, due to the contributions of the ions arriving during the pulse-on period (high energy) and the pulse-off period (low energy). Moreover, by using the same model, they revealed that the IEAD became asymmetric as the bias voltage increased from −1 kV to −10 kV, with the ICP power of 500 W. [19] Husein et al [1] experimentally observed a rough silicon surface with deeper valleys during the PIII modification in N 2 plasmas, when the bias voltage was low (i.e., 4 kV).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

View full text Add to dashboard Cite

Planar radio frequency inductively coupled plasmas (ICP) are employed for low-voltage ion implantation processes, with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional (2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to −4000 V, due to the heating of the capacitive field caused by the bias power. The N + fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N + 2 fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and 40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Sun

Zhang

et al. 2017

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…Hence, bombarding ion energies should be decreased for these applications such as ultra shallow junction formation. 5 Utilization of low-energy ion beams becomes increasingly important as device miniaturization continues. However, the present commercially available ion sources have difficulties in realizing a homogeneous low-energy ion beam due to severe space-charge effects.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of low-energy ion beams extracted from a wire electrode geometry

Vasquez

Tokumura

Kasuya

et al. 2012

Review of Scientific Instruments

View full text Add to dashboard Cite

Beams of argon ions with energies less than 50 eV were extracted from an ion source through a wire electrode extractor geometry. A retarding potential energy analyzer (RPEA) was constructed in order to characterize the extracted ion beams. The single aperture RPEA was used to determine the ion energy distribution function, the mean ion energy and the ion beam energy spread. The multi-cusp hot cathode ion source was capable of producing a low electron temperature gas discharge to form quiescent plasmas from which ion beam energy as low as 5 eV was realized. At 50 V extraction potential and 0.1 A discharge current, the ion beam current density was around 0.37 mA/cm2 with an energy spread of 3.6 V or 6.5% of the mean ion energy. The maximum ion beam current density extracted from the source was 0.57 mA/cm2 for a 50 eV ion beam and 1.78 mA/cm2 for a 100 eV ion beam.

show abstract

“…The ion injection angle perturbed by the plasma sheath around the wafer [12,13] is included. Both the biased voltage applied to the wafer and the plasma potential [14] are considered in determining the implanted ion energy, and the statistic distribution of ion energies is modelled. Simulation results show that the model has a notable effect on the simulated dopant profiles, and more reasonable simulation results can be achieved with the models presented here.…”

Section: Introductionmentioning

confidence: 99%

Simulation of plasma doping process by using the localized molecular dynamics method

Ren

et al. 2008

Chinese Phys. B

View full text Add to dashboard Cite

Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.

show abstract

Time evolution of ion energy distributions for plasma doping

Cited by 8 publications

References 4 publications

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Characteristics of low-energy ion beams extracted from a wire electrode geometry

Simulation of plasma doping process by using the localized molecular dynamics method

Contact Info

Product

Resources

About