2013
DOI: 10.1016/j.jcrysgro.2013.02.029
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Time evolution of self-assembled GaAs quantum rings grown by droplet epitaxy

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Cited by 5 publications
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“…This sample is unusual as NHs are formed generally above 500 ℃ and under arsenic pressure of 10 -7 Torr. In sample 23, the NH was formed at low substrate temperature T substrate =300 ℃ and at medium arsenic pressure P as = 10 -6 Torr, after 1 minute of annealing at T=300 ℃ [25].…”
Section: 𝑄𝐷(%) =mentioning
confidence: 99%
“…This sample is unusual as NHs are formed generally above 500 ℃ and under arsenic pressure of 10 -7 Torr. In sample 23, the NH was formed at low substrate temperature T substrate =300 ℃ and at medium arsenic pressure P as = 10 -6 Torr, after 1 minute of annealing at T=300 ℃ [25].…”
Section: 𝑄𝐷(%) =mentioning
confidence: 99%