Phys. Rev. Applied
 2024
DOI: 10.1103/physrevapplied.22.024075
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Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

Maximilian W. Feil,
Magdalena Weger,
Hans Reisinger
et al.
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