Time-of-flight photoconductivity investigation of high charge carrier mobility in Ti3C2Tx MXenes thin-film

Urbancic, J.; Tomsič, Erika; Chhikara, Manisha; Pastukhova, Nadiia; Tkachuk, Volodymyr A.; Dixon, A. R.; Mavrič, Andraž; Hashemi, Payam; Sabaghi, Davood; Nia, Ali Shaygan; Bratina, Gvido; Pavlica, Egon

doi:10.1016/j.diamond.2023.109879

Cited by 10 publications

(2 citation statements)

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“…The interflake resistance is complicated by factors such as flake size, flake arrangement, and delamination agents during synthesis. Ti 3 C 2 T x thin films made of well-aligned and bigger flakes have greater conductivity ranges from 5000 to 9880 S cm. , …”

Section: Electronic Properties Of Ti3c2t X Mxenementioning

confidence: 99%

“…Also, the possibility of work function engineering, by diversely tuning the surface functional groups, is an added advantage. Among all other MXenes, Ti 3 C 2 T x MXene is the highly preferred owing to its high metallic conductivity, , chemical stability, high anisotropic carrier mobility, high optical transmittance, ease of aqueous solution processing, tunable work functions, wide range of optical absorption from Ultraviolet (UV) to Near-infrared (NIR) range, and plasmonic , and nonlinear optical properties. ,, …”

Section: Introductionmentioning

confidence: 99%

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Ti₃C₂T_x MXene: A New Promising 2D Material for Optoelectronics

Vadakke Neelamana,

Rekha,

Bhat

2023

Chem. Mater.

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MXenes are the new members in the family of two-dimensional (2D) layered materials composed of transitional metal carbides, nitrides, or carbonitrides. Among all other MXenes, Ti3C2T x MXene is the most studied one due to the exceptional properties that make it suitable for various applications, including optoelectronics. Ti3C2T x MXene can be fabricated and processed in a variety of scalable and cost-effective ways. MXenes are solution-processable materials that can be deposited by spin, spray, or dip coating, painting, or printing. They exhibit excellent optical transparency, high metallic conductivity, efficient photothermal conversion, plasmonic behavior, and tunability of the optical response over traditional 2D materials. These features have led to a fast evolution of this material with many explorations of its applications in the field of optoelectronics. This short review summarizes the recent updates on the synthesis, optical, as well as electronic properties, and the various optoelectronic applications of Ti3C2T x MXene in the materials point of view. The challenges to be overcome for their successful integration into the optoelectronics domain and opportunities for future explorations are also discussed.

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Section: Electronic Properties Of Ti3c2t X Mxenementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ti₃C₂T_x MXene: A New Promising 2D Material for Optoelectronics

Vadakke Neelamana,

Rekha,

Bhat

2023

Chem. Mater.

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High‐sensitive and fast MXene/silicon photodetector for single‐pixel X‐ray imaging

Chen,

Dai,

Bodepudi

et al. 2024

InfoMat

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The demand for high‐performance X‐ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X‐ray detectors are often susceptible to chemical and irradiation instability, complex fabrication processes, hazardous components, and difficult compatibility. Here, we investigate a two‐dimensional (2D) material with a relatively low atomic number, Ti3C2Tx MXenes, and single crystal silicon for X‐ray detection and single‐pixel imaging (SPI). We fabricate a Ti3C2Tx MXene/Si X‐ray detector demonstrating remarkable optoelectronic performance. This detector exhibits a sensitivity of 1.2 × 107 μC Gyair−1 cm−2, a fast response speed with a rise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s−1. These superior performances are attributed to the unique charge coupling behavior under X‐ray irradiation via intrinsic polaron formation. The device remains stable even after 50 continuous hours of high‐dose X‐ray irradiation. Our device fabrication process is compatible with silicon‐based semiconductor technology. Our work suggests new directions for eco‐friendly X‐ray detectors and low‐radiation imaging system.image

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Fabrication and characterization of poly(fullerene) thin films for gas sensors

Simõis,

Borro,

Medina

et al. 2024

Polymer International

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Ammonia, despite being a naturally generated compound in the metabolic process, can be harmful to health in higher concentrations. In this context, sensor devices are directly related to health and safety measurements to detect the presence of such substances. In this work, we study materials derived from fullerene, a material with a high electron affinity. We characterize three fullerene derivatives, namely PCBM, OPCBMMB and PPCBMB, and verify their applicability as ammonia sensors. The materials were studied in the form of thin films, produced by Langmuir–Schaefer and drop‐casting techniques. Optical characterization was performed using UV–visible spectroscopy while morphological characteristics were studied using atomic force microscopy (AFM) and optical microscopy (OM). Current versus voltage and current versus time measurements were performed in order to determine the films' conductivities, electrical resistances and gas‐sensing properties. UV–visible absorption was observed at lower wavelengths, with peaks in the UV region. In the electrical measurements, differences were observed between the deposition techniques, with the Langmuir–Schaefer films showing a higher conductivity than the drop‐casting films. AFM and OM also showed differences in the film surfaces between the techniques, with a rougher surface on the drop‐casting films. When exposed to ammonia, the materials showed electrical responses at every cycle, with a significant increase in their electrical responses. © 2024 Society of Chemical Industry.

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Time-of-flight photoconductivity investigation of high charge carrier mobility in Ti3C2Tx MXenes thin-film

Cited by 10 publications

References 64 publications

Ti₃C₂T_x MXene: A New Promising 2D Material for Optoelectronics

Ti₃C₂T_x MXene: A New Promising 2D Material for Optoelectronics

High‐sensitive and fast MXene/silicon photodetector for single‐pixel X‐ray imaging

Fabrication and characterization of poly(fullerene) thin films for gas sensors

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Time-of-flight photoconductivity investigation of high charge carrier mobility in Ti3C2Tx MXenes thin-film

Cited by 10 publications

References 64 publications

Ti3C2Tx MXene: A New Promising 2D Material for Optoelectronics

Ti3C2Tx MXene: A New Promising 2D Material for Optoelectronics

High‐sensitive and fast MXene/silicon photodetector for single‐pixel X‐ray imaging

Fabrication and characterization of poly(fullerene) thin films for gas sensors

Contact Info

Product

Resources

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Ti₃C₂T_x MXene: A New Promising 2D Material for Optoelectronics

Ti₃C₂T_x MXene: A New Promising 2D Material for Optoelectronics