Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors

Zagrajek, Przemysław; Danilov, Sergey; Marczewski, J.; Zaborowski, M.; Kołaciński, Cezary; Obrebski, Dariusz; Kopyt, P.; Salski, Bartłomiej; But, Dmytro B.; Knap, W.; Ganichev, Sergey

doi:10.1007/s10762-019-00605-0

Cited by 13 publications

(8 citation statements)

References 37 publications

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“…Figure 6 shows the comparison of the THz response and responsivity. The responsivity as a function of the power for the TCAD models is calculated by normalizing the simulated response as a function of the THz signal magnitude to the measured responsivity for Si MOSFETs in [23]. The modeling results are obtained by using the transient simulation without modulation, except for the Si-Ge HBT model in the 1 mV and 0.1 V range of the THz signal magnitude, where the response is obtained from the HB simulation.…”

Section: Response Simulation Resultsmentioning

confidence: 99%

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TCAD Modeling for Si–Ge HBT THz Detectors

Liu¹,

Suarez²,

Shur³

2021

RSL

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Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a technology computer-aided design (TCAD) model for Si-Ge heterojunction bipolar transistors (HBTs), we simulate the current-voltage characteristics and the response to sub-THz (300 GHz) radiation. Applying different mixed mode schemes in TCAD, we simulated the dynamic range of the THz response for Si-Ge HBTs and showed that it is comparable with that of the field effect transistor-based THz (TeraFET) detectors. The HBT response to the variations of the detector design parameters are investigated at different frequencies with the harmonic balance simulation in TCAD. These results are useful for the physical design and optimization for the HBT THz detectors and for the identification of faulty Si-Ge HBT and Si bipolar (Bi)CMOS circuits by using sub-THz or THz scanning.

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Section: Response Simulation Resultsmentioning

confidence: 99%

“…Figure 6. Comparison of the dynamic ranges: (a) simulated collector or drain response for the Si-Ge HBT and TeraFET TCAD models and (b) simulated responsivity normalized to the measured data[23].…”

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confidence: 99%

TCAD Modeling for Si–Ge HBT THz Detectors

Liu¹,

Suarez²,

Shur³

2021

RSL

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“…The log-periodic circular-toothed antenna-coupled bilayer graphene field-effect transistor (GFET) THz detector has sensitivity up to ∼150 mV•W −1 at 0.3 THz and modulation frequency of 500 Hz [27]. The log-periodic broadband planar antenna-coupled Si junctionless FET (JLFET) detector has sensitivity up to ∼500 mV•W −1 at 0.18 THz and modulation frequency of 187 Hz [28]. The on-chip crossdipole antenna-coupled thermal CMOS THz detector has sensitivity up to ∼6000 mV•W −1 at 0.8 THz [29].…”

Section: Discussionmentioning

confidence: 99%

Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

et al. 2021

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The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

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“…Most of the potential microwave and THz applications require sensitive but robust detectors with fast response time operating at room temperature [12]. Field-effect transistors are widely used to sense and detect sub-terahertz and THz radiation [10,[13][14][15][16][17][18][19][20]. The possibility to use field-effect transistors as THz detectors was first proposed by Dyakonov and Shur [21].…”

Section: Introductionmentioning

confidence: 99%

Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection

Ašmontas

Anbinderis

Čerškus

et al. 2020

Sensors

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We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts. When the gate is located by the wide contact, the voltage sensitivity increases ten times as compared to the case of the ungated diode, and the detected voltage holds the same polarity of the thermoelectric electromotive force of hot electrons in an asymmetrically shaped n-n+ junction. Another remarkable effect of the gate placed by the wide contact is weak dependence of the detected voltage on frequency which makes such a microwave diode to be a proper candidate for the detection of electromagnetic radiation in the microwave and sub-terahertz frequency range. When the gate is situated beside the narrow contact, the two orders of sensitivity magnitude increase are valid in the microwaves but the voltage sensitivity is strongly frequency-dependent for higher frequencies.

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Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors

Cited by 13 publications

References 37 publications

TCAD Modeling for Si–Ge HBT THz Detectors

TCAD Modeling for Si–Ge HBT THz Detectors

Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection

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