1987
DOI: 10.1063/1.98499
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Time-resolved direct observation of Auger recombination in semiconductor-doped glasses

Abstract: Using time-resolved techniques, absorption recovery, and degenerate four-wave mixing, we directly observe the nonexponential intensity-dependent recombination of free carriers photoexcited in semiconductor-doped glasses. We assign this behavior to Auger recombination.

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Cited by 72 publications
(26 citation statements)
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“…It is speculated that the heat generated by this multiphonon decay induces local structural changes [90] that can anneal or eliminate the trap states, and create additional `dangling-bond' surface states [91] . Therefore, after extended laser exposure, fewer trap states and more surface states exist, carriers decay through the accumulated surface states before they can decay into the few remaining trap states, quantum efficiency decreases [47], and the slow decay is suppressed . We have observed an increase in the absorption of quantumdot-doped glasses after extended laser exposure .…”
Section: Trapped-carrier Decay Suppressionmentioning
confidence: 98%
See 1 more Smart Citation
“…It is speculated that the heat generated by this multiphonon decay induces local structural changes [90] that can anneal or eliminate the trap states, and create additional `dangling-bond' surface states [91] . Therefore, after extended laser exposure, fewer trap states and more surface states exist, carriers decay through the accumulated surface states before they can decay into the few remaining trap states, quantum efficiency decreases [47], and the slow decay is suppressed . We have observed an increase in the absorption of quantumdot-doped glasses after extended laser exposure .…”
Section: Trapped-carrier Decay Suppressionmentioning
confidence: 98%
“…However, a decrease in the free-carrier decay time within the fast picosecond regime has also been observed with increasing intensity : Yao et al [39] At high excitation intensities and sufficiently high temperatures, Auger recombination, where the electron-hole recombination energy is transferred to a free electron or hole instead of being emitted as a photon, can also reduce the decay lifetime (dN/dtocN 3 where N is the free-carrier density) . Several groups have claimed to observe a reduction in the free-carrier recombination lifetime induced by Auger recombination in doped glasses [26,47,48] . However, Auger recombination has been found to be negligible in large-gap semiconductors where E g >0 .…”
Section: 4 Intensity-dependent Decaymentioning
confidence: 99%
“…One of the most important features of QDs is the band‐gap energy shift by their strong quantum confinement effects that has been clarified by the pioneering works in various types of semiconductor nanocrystals . It was also clarified that the quantum confinement effects cause efficient many‐body interaction, e.g., nonradiative Auger recombination . After that, through a lot of progresses in their size and composition control, the band‐gap tuning becomes more and more accurate and extends to the whole visible spectral range .…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11] It was also clarified that the quantum confinement effects cause efficient many-body interaction, e.g., nonradiative Auger recombination. [12][13][14] After that, through a lot of progresses in their size and composition control, the band-gap tuning becomes more and more accurate and extends to the whole visible spectral range. [15][16][17] Moreover, QD structures suppressing Auger recombination were investigated.…”
Section: Introductionmentioning
confidence: 99%
“…However, the decay time of the former is shorter than that of the latter. The difference in the decay times between the transient absorption and the DFWM is considered to be due to photodarkening and Auger effect [10]. Since photon energy of pump light (2.57 eV) is higher than band-gap energy of semiconductor (1.85 eV) in R-68, high density of carriers are generated by one-photon absorption for the transient absorption experiment.…”
mentioning
confidence: 99%