2003
DOI: 10.1063/1.1614831
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Time-resolved dynamics in single InGaN quantum dots

Abstract: Articles you may be interested inBlue single photon emission up to 200K from an InGaN quantum dot in AlGaN nanowire Appl. Phys. Lett. 102, 161114 (2013); 10.1063/1.4803441 Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriersDiscrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

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Cited by 53 publications
(39 citation statements)
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“…The decay time was parameterized by fitting a straight line to a portion of the decay trace, plotted on a logarithmic scale, and was found to be ϳ0.50 ns, which is much shorter than the lifetimes of ϳ2n s reported for InGaN QDs grown by self-assembly techniques. 13 The shorter exciton recombination time in selectively grown QDs is believed to be due to the stronger coupling of the zero-dimensional QD state to the side QWs in this system, in contrast to self-assembled nanostructures where the QD is relatively decoupled from an underlying wetting layer.…”
mentioning
confidence: 99%
“…The decay time was parameterized by fitting a straight line to a portion of the decay trace, plotted on a logarithmic scale, and was found to be ϳ0.50 ns, which is much shorter than the lifetimes of ϳ2n s reported for InGaN QDs grown by self-assembly techniques. 13 The shorter exciton recombination time in selectively grown QDs is believed to be due to the stronger coupling of the zero-dimensional QD state to the side QWs in this system, in contrast to self-assembled nanostructures where the QD is relatively decoupled from an underlying wetting layer.…”
mentioning
confidence: 99%
“…Excitonic recombination lifetimes for (In)GaN QDs have been reported to be in the wide range of 0.4-180 ls. [17][18][19] The huge variation of the measured lifetimes is related to the electron and hole wave function overlap, affected by the dot size and shape, as well as the indium concentration in the QDs and their surroundings. 17 These results are supported by theoretical results which show that the built-in piezo-and pyroelectric fields within the InGaN/GaN QDs cause a sensitive dependence of the radiative lifetime on the QD geometry and composition.…”
mentioning
confidence: 99%
“…These findings suggest that the previously observed non-exponential behaviour is likely to be due to the combination of QD and WL contributions. The temperature dependence of the PL and the lifetime was investigated [33]. Quenching and broadening of the QD emission together with a monotonic decrease of the lifetime with increasing temperature were found.…”
Section: Time-resolved Measurementsmentioning
confidence: 99%