Time resolved fluorescence of the A 2Σ+ state of GeF

Abstract

The radiative lifetime and quenching rates for the A 2Σ+ state of GeF have been measured in the flame of GeH4+F2 by pulsed laser induced fluorescence. In addition, the radiative lifetime of the ν′=0 level of the A 2Σ+ state of SiF has been measured in the flame of SiH4+F2. Quenching rates for He, N2, and SF6 on GeF A 2Σ and He on SiF A 2Σ have also been determined. The average zero pressure lifetime of ν′=0, 1, and 2 levels of A 2Σ GeF is 990±100 nsec. The zero pressure lifetime of the A 2Σ state of SiF is 205±20 nsec. The average quenching rates for He, N2, and SF6 on GeF A 2Σ are 1.6×105, 6.4×106, and 8×105 sec−1 Torr−1, respectively. The quenching rate of He on A 2Σ (ν′=0) SiF is 6.5×104 sec−1 Torr−1.

Cationic Germanium Fluorides: A Theoretical Investigation on the Structure, Stability, and Thermochemistry of GeFn/GeFn+ (n = 1−3)

“…The properties of neutral germanium fluorides GeF n ( n = 1−5) have been intensively investigated over the years by various experimental and theoretical methods, − not only for fundamental reasons but also for their active role in the fine processing of semiconductors. − More recently, the structure, stability, and thermochemistry of the corresponding anionic species GeF n - ( n = 1−5) have been systematically investigated by density functional methods, and discussed in connection with previous related experimental and theoretical data. 3j,k,− ,− As for cationic germanium fluorides, experimental and theoretical studies 55a,61 indicate that, in the ground state, GeF 4 + is unstable and prone to dissociate into GeF 3 + and atomic fluorine. On the other hand, all the other ground-state GeF n + ( n =1−3) are quite stable in the gas phase and abundantly detected, for example, from the electron impact fragmentation of GeF 4 55a.…”