2021
DOI: 10.1002/solr.202100140
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Time‐Resolved Investigation of Transient Field Effect Passivation States during Potential‐Induced Degradation and Recovery of Bifacial Silicon Solar Cells

Abstract: Various types of potential‐induced degradation (PID) with fundamentally different physical root causes have been observed recently ranging from shunting (PID‐s), corrosion (PID‐c) to degradation of surface passivation (PID‐p). Herein, PID‐p is investigated for the first time at the rear side of bifacial silicon solar cells with enhanced time‐resolution during degradation and recovery under simultaneous illumination. The tests reveal fast transient changes of rear‐side short‐circuit current within minutes and t… Show more

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Cited by 11 publications
(21 citation statements)
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“…In particular, recent work describes a PID-p mechanism without Na+ caused by a change in charge state of K-centers in the silicon nitride layer. 24,25 Although we observe PID-p in our G/EVA/G samples, the roles of Na+ or other charged species require further investigation.…”
Section: Current-voltage Characteristicsmentioning
confidence: 71%
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“…In particular, recent work describes a PID-p mechanism without Na+ caused by a change in charge state of K-centers in the silicon nitride layer. 24,25 Although we observe PID-p in our G/EVA/G samples, the roles of Na+ or other charged species require further investigation.…”
Section: Current-voltage Characteristicsmentioning
confidence: 71%
“…Recent studies suggest PID can manifest in varying forms, for example, shunting (PID-s), [18][19][20] polarization (PID-p), 16,[21][22][23][24][25] and metallization or cell-stack corrosion (PID-c). 26,27 All PID types generally arise from movement of charged species caused by an electric field between the operating solar cells and the module's grounded frame.…”
Section: Introductionmentioning
confidence: 99%
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