Time resolved magneto-optical studies of ferromagnetic InMnSb films

Frazier, Matthew; Kini, R. N.; Nontapot, Kanokwan; Khodaparast, Giti A.; Wójtowicz, T.; Liu, X.; Furdyna, J. K.

doi:10.1063/1.2842423

Cited by 7 publications

(6 citation statements)

References 15 publications

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“…The initial sharp decrease in the differential reflectivity can result from free carrier Drude absorption whereas; the alteration of the dielectric function of the film through changes in the electron and hole distribution functions, can be responsible for the observed sign change of the differential reflectivity. A similar fast carrier dynamics and the sign change in the transient reflectivity have been reported in MBE grown InMnAs and InAs films [14][15][16][17]20] . The possibility of increasing the relaxation time of the photo-excited carriers by injection carrier above the gap into the satellite valley can be important in developing devices on the basis of these ferromagnetic materials.…”

Section: Carrier Dynamics In Inmnas and Inmnsbsupporting

confidence: 53%

“…Most of the understanding of the carrier relaxation in narrow gap (III,Mn)V ferromagnetic structures has been on the basis of two color differential reflectivity spectroscopy [14][15][16][17] where the rapid change of the differential reflectivity was ascribed to a fast disappearance of photo-induced free carriers through ultrafast trapping by mid-gap states. Similar fast relaxation in the differential reflectivity patterns of relaxation dynamic are commonly seen in low-temperature-grown III-V semiconductors [18] .…”

Section: Carrier Dynamics In Inmnas and Inmnsbmentioning

confidence: 99%

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Probe of coherent and quantum states in narrow-gap based semiconductors with strong spin-orbit coupling

et al. 2010

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In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. In this work, time resolved spectroscopy of InSb-based parabolic multi-quantum wells and narrow gap ferromagnetic alloys grown by MOVPE, have been pursued. In addition, in this study, we report on CR experiments carried out on the ferromagnetic InMnAs film, on which clear resonance signals have been successfully observed in high magnetic fields. Investigation of the electronic structure of III-Mn-V alloys by techniques such as the cyclotron resonance can shed important light on the origin of ferromagnetism and the p-d exchange interaction in III-Mn-V systems. Our results are important for understanding the electronic and magnetic states in these material systems.

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Section: Carrier Dynamics In Inmnas and Inmnsbsupporting

confidence: 53%

Section: Carrier Dynamics In Inmnas and Inmnsbmentioning

confidence: 99%

Probe of coherent and quantum states in narrow-gap based semiconductors with strong spin-orbit coupling

et al. 2010

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“…[10][11][12][13] In the reported measurements, rapid change of the differential reflectivity was observed and ascribed to a fast disappearance of photoinduced free carriers through ultrafast trapping by midgap states. The carrier relaxation time reported in the MBE grown InMnAs 12 demonstrated a similar time scale as an InAs film under similar experimental conditions.…”

Section: Narrow Gap Ferromagnetic Semiconductors (Ngfs) Such Asmentioning

confidence: 91%

Time-resolved differential transmission in MOVPE-grown ferromagnetic InMnAs

et al. 2012

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We measured time-resolved differential transmission in InMnAs for different pump/probe schemes as a function of temperature, laser fluence, and external magnetic field. We observed tunability of the carrier relaxation time. In addition, we found that the sign of the differential transmission changed as a function of probe wavelength. The electronic structure for InMnAs was calculated for B = 0, using an eight-band k·p model, which includes conduction and valence band mixing as well as coupling of electrons and holes to the magnetic Mn impurities. This allows us to explain some of the carrier dynamics and the sign changes in the differential transmission.

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“…Most of the understanding of the spin relaxation in narrow gap (III,Mn)V ferromagnetic structures has been on the basis of two color magneto-optical Kerr (MOKE) time-domain spectroscopy [21][22][23][24] . In multi-layer structures, the signal in general, is a mixture of "absorptive" (resonant) and "dispersive" contributions.…”

Section: Time Resolved Measurements Of Inmnasmentioning

confidence: 99%

Probe of coherent and quantum states in narrow-gap semiconductors in the presence of strong spin-orbit coupling

et al. 2010

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In light of the growing interest in spin-related phenomena and devices, there is now a renewed interest in the science and engineering of narrow gap semiconductors. They offer several scientifically unique electronic features such as a small effective mass, a large g-factor, a high intrinsic mobility, and large spin-orbit coupling effects. Our studies have been focused on probing and controlling the coherent and quantum states in InSb quantum wells and InMnAs ferromagnetic semiconductors. Our observations are providing new information regarding the optical control of carriers and spins in these material systems. We demonstrated the generation of spin polarized photo-current in an InSb QW where a non-equilibrium spin population has been achieved by using circularly polarized radiation. In addition, the differential transmission measurements in InSb QWs demonstrated that the initial distribution function strongly influences the carrier relaxation dynamics. We employed the polarization-resolved differential transmission as well as the MOKE measurements to provide information on the spin relaxation dynamics in MOVPE grown InMnAs. Our measured T 1 is comparable to the reported measurements in MBE grown InMnAs and several time resolved measurements on InAs.

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Time resolved magneto-optical studies of ferromagnetic InMnSb films

Abstract: .; Kini, R. N.; Nontapot, K.; et al., "Time resolved magnetooptical studies of ferromagnetic InMnSb films," Appl. Phys. Lett. 92, 061911 (2008); http://dx

Cited by 7 publications

References 15 publications

Probe of coherent and quantum states in narrow-gap based semiconductors with strong spin-orbit coupling

Probe of coherent and quantum states in narrow-gap based semiconductors with strong spin-orbit coupling

Time-resolved differential transmission in MOVPE-grown ferromagnetic InMnAs

Probe of coherent and quantum states in narrow-gap semiconductors in the presence of strong spin-orbit coupling

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