Time-Resolved Measurements of Sum-Frequency Generation Strongly Enhanced in (113)B GaAs/AlAs Coupled Multilayer Cavity

Abstract

Time-resolved measurements of sum-frequency generation (SFG) of two cavity modes, which were realized in a GaAs/AlAs coupled multilayer cavity structure grown on a (113)B-oriented GaAs substrate, were performed. Strongly enhanced SFG and second-harmonic generation (SHG) signals have been demonstrated by the simultaneous excitation of two cavity modes using 100 fs laser pulses. In the time-resolved measurements, the sample was irradiated by two 100 fs laser beams with a time delay and the SFG and SHG signals generated by combining two beams were detected using a small slit. The delay-time-dependent measurements have revealed that the SFG and SHG signals decay with the photon lifetime (0.6 ps) of the coupled multilayer cavity, and the oscillating behavior with the period (0.3 ps) corresponding to the optical frequency difference (3.3 THz) between two cavity modes is significant only for the SFG. The experimental results were well explained by the simulated light electric field inside the coupled cavity under two Gaussian pulse excitation.

Two‐color lasing in a coupled multilayer cavity with InAs quantum dots by optical pumping

“…Since the light electric fields of both modes are strongly enhanced in both cavity layers, strong nonlinear optical responses such as frequency mixing of two modes can be expected when the coupled cavity structure was grown on a non-(001) GaAs substrate. In our recent studies, strong sum-frequency gen- eration (SFG) in the near-infrared region [12][13][14] and difference-frequency generation (DFG) in the terahertz region [15,16] were already demonstrated by simultaneous excitation of two modes of the coupled cavity structures grown on (113)B GaAs substrates. In the measurements, femtosecond laser pulses which had a wide spectral width of ∼35 nm were used as the fundamental light sources of two cavity modes.…”

Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates

“…We have obtained a strong sum-frequency generation (SFG) signal from a GaAs=AlAs coupled multilayer cavity grown on a (113)B GaAs substrate when the two modes were simultaneously excited by 100 fs laser pulses. [14][15][16] DFG signals from the (113)B coupled cavity samples were also demonstrated at room temperature by time-resolved waveform measurements using 100 fs laser pulses and a photoconductive antenna. [17][18][19] From the viewpoint of practical device applications, the two modes should be generated inside the structure by current injection, [20][21][22][23] since this enables THz emission through DFG without external light sources.…”

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

“…16) We have demonstrated a strong sumfrequency generation (SFG) signal from a GaAs=AlAs coupled multilayer cavity grown on a (113)B GaAs substrate by irradiating with 100 fs laser pulses whose frequency covers the two cavity modes. [17][18][19] The DFG signal was also observed at room temperature by time-domain spectroscopy using a photoconductive antenna. [20][21][22] We should take care of the spatial distribution of the nonlinear polarization to realize a large THz-DFG of two modes.…”