Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Parola, S.; Blanc-Pélissier, D.; Barbos, Corina; Coz, Marine Le; Poulain, G.; Lemiti, M.

doi:10.1016/j.apsusc.2015.10.230

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…In contrast, in the case of the traditional laser opening process, the Al 2 O 3 and SiN x layers have very small absorption of laser energy, so the strategy for creating holes is that the Si wafer absorbs heat energy, which would then be transferred by conduction in a few nanoseconds to the adjacent layers [ 9 , 10 , 11 ]. The ablation of the passivation layer initiates when the temperature reached in the layers is of the order of the boiling temperature (around 3525 K for Al 2 O 3 and 2150 K for SiN x ) [ 12 ]. The required laser energy is about 0.8 J/cm 2 , which is close to the energy (typically around 1 J/cm 2 ) that can melt or damage Si wafers [ 12 ].…”

Section: Resultsmentioning

confidence: 99%

“…The ablation of the passivation layer initiates when the temperature reached in the layers is of the order of the boiling temperature (around 3525 K for Al 2 O 3 and 2150 K for SiN x ) [ 12 ]. The required laser energy is about 0.8 J/cm 2 , which is close to the energy (typically around 1 J/cm 2 ) that can melt or damage Si wafers [ 12 ]. It is noted that there might be some kind of carbon trace remaining on the surface wafer, and this would possibly affect metal contact formation.…”

Section: Resultsmentioning

confidence: 99%

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Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells

et al. 2016

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The passivated emitter and rear cell (PERC) concept is one of the most promising technologies for increasing crystalline silicon solar cell efficiency. Instead of using the traditional laser ablation process, this paper demonstrates spin-coated polystyrene spheres (PS) to create local openings on the rear side of PERCs. Effects of PS concentration and post-annealing temperature on PERC performance are investigated. The experimental results show that the PS are randomly distributed on wafers and no PS are joined together at a spin rate of 2000 rpm. The PS can be removed at a temperature of 350 °C, leaving holes on the passivation layers without damaging the wafer surfaces. As compared to the laser opening technique with the same contact fraction, the PS opening technique can yield a higher minority effective lifetime, a higher implied open-circuit voltage, and a slightly higher short-circuit current. Although the fill factor of the PS opening technique is lower owing to non-optimized distribution of the openings, the conversion efficiency of the devices is comparable to that of devices prepared via the laser opening process.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells

et al. 2016

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“…Some research groups have employed lasers to reactivate inactive dopants subsequent to heavy thermal diffusion, improving the overall result of the diffusion [14]. However, laserinduced damage can reduce the solar cell performance and thus the in uence of the laser process has to be investigated carefully [15]. Bulk lifetime of laser processed samples can help to quantify such damage.…”

Section: Introductionmentioning

confidence: 99%

Investigation of laser doping on the formation of selective emitter solar cells

Meziani,

Moussi,

Chaouchi

et al. 2023

Preprint

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We investigated laser parameters for a laser doping (LD) process that enables to improve cell characteristics through the formation of a selective emitter (SE) multicrystalline silicon solar cell. In this work, the aim is the formation of SE with an investigation of the effect of critical LD parameters, such as laser power and laser speed. The LD 532 nm is used to obtain highly doped regions and deep doping depth that will receive the screen printed silver grid contact. The optimized laser power and speed of 80%, 500 mm/s, induced the activation of the phosphorus dopant and its diffusion in the silicon then leads to a local decrease of the emitter sheet resistance from 60 Ω/sqr to 30 Ω/sqr. Moreover, it was determined by SIMS and ECV measurements that the dopant concentration increased and the doping depth became deeper in the selective emitter formed by increasing laser power and/or laser speed. Fortunately, the surface cracks damage were not observed. The only damage caused by laser irradiation evidenced by debris and a melted surface. We have successfully developed SE p-type mc-Si 4 inch wafer produced by CRTSE solar cell with FF significantly improved of 1.01%. The conversion efficiency of solar cells with selective emitter formed by LD was increased. This gain is due to improved short-circuit current density and open-circuit voltage.

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“…In this study, we correlate luminescence spreading under partial illumination with carrier kinetics measured by time‐resolved microwave photoconductance decay (μPCD). While μPCD and time‐resolved photoluminescence (trPL) are popular methods for direct measurement of carrier kinetics in photovoltaic materials, both techniques are most often designed to measure lifetimes within an area photoexcited by the laser pulse without explicit consideration of carrier drift away from the photoexcitation into the nonilluminated cell regions. As we further discuss in this study, the transients measured on fully fabricated device structures with conductive layers, such as an emitter or electrodes, are likely affected by factors, such as the cell's resistance, capacitance, and area.…”

mentioning

confidence: 99%

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules

2019

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Lateral drift currents caused by partial or patterned illumination of photovoltaic cells have important implications for laser‐based screening methods and luminescence imaging of fielded and lab‐stressed modules. This study investigates the kinetics of carrier drift and bulk recombination following patterned illumination in commercial silicon heterojunctions with intrinsic thin layer (HIT) modules, comparing the kinetics between a ten‐year field‐weathered module versus a control module that is stored indoors. The measurement of the microwave photoconductance decay (μPCD) transients in the modules, both coincident with the photoexcitation and in nonilluminated cell regions, reveals carrier drift on the 100 μs timescale, followed by millisecond bulk lifetimes. Importantly, the μPCD transients are consistent with luminescence spreading over the cell, which is imaged using a time‐gated InGaAs array camera. The weathered HIT module shows slower lateral drift and faster bulk lifetimes compared with the control, suggesting increased series resistance and accelerated nonradiative recombination in this module, attributable to degradation of the transparent conductive oxide and degradation of the passivation layer, respectively. These results provide a novel example of using time‐resolved measurements directly on full photovoltaic modules to reveal causes of degradation, providing insight for further development of module imaging and screening capabilities.

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Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Cited by 6 publications

References 12 publications

Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells

Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells

Investigation of laser doping on the formation of selective emitter solar cells

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules

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