Time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells

Shirakata, Sho; Nakada, Tokio

doi:10.1016/j.tsf.2006.12.040

Cited by 95 publications

(90 citation statements)

References 16 publications

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“…Depending on the TF technology, the photoluminescence decays in a ps to ns time scale [75,79,80]. These short decay times are typically resolved with a mode-locked laser and provide some insight into carrier dynamics.…”

Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

“…These short decay times are typically resolved with a mode-locked laser and provide some insight into carrier dynamics. To a certain extent, the photoluminescence decay time of TF solar cells is correlated to device performances [79,80].…”

Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

“…LIPEE was further developed to study the radial distribution of crystallites in parallel-plate discharges and the influence of the reactor temperature on the formation of silicon crystallites in Ar-SiH 4 discharges. It has been demonstrated that lower reactor temperatures [67,75,79,80] Photothermal deflection spectroscopy Laser beam deflections Sub-bandgap absorption, [81][82][83] defect densities…”

Section: Laser-induced Particle Explosive Evaporationmentioning

confidence: 99%

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Laser applications in thin-film photovoltaics

et al. 2010

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We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se 2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laserbased fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH 4 ), silane radicals (SiH 3 , SiH 2 , SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

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Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

Section: Laser-induced Particle Explosive Evaporationmentioning

confidence: 99%

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Laser applications in thin-film photovoltaics

et al. 2010

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“…5 The luminescence is a powerful technique for the characterization of the recombination of semiconductor materials and devices based on the radiative transition of the excited electron-hole pairs. 6,7 The non-assisted recombination (NAR, the normal recombination which is not assisted by the tunneling) in NTR and SCR can be characterized by photoluminescence (PL) because of the good penetrability of the laser. To date, however, the TAR in SCR of CIGS solar cells still cannot be directly observed as it always entwines with NAR.…”

Section: Introductionmentioning

confidence: 99%

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

Yang

et al. 2016

AIP Advances

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The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely VSe, InCu and (InCu+VCu), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of EC-0.08, EC-0.20 and EC-0.25 eV, respectively. The InCu and (InCu+VCu) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se2 layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (InCu+VCu) and Vse defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se2 conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.

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“…Photoluminescence (PL) spectroscopy is a widely used technique to study carrier recombination process in the CIGS materials as well as CZTSSe. [15][16][17][18][19][20][21] However, to investigate the junction quality of the semiconductors, electroluminescence (EL) proves to be useful. [22][23][24][25] Nevertheless, EL-spectroscopy the principle of which is the exact inverse of the photovoltaic principle has never been used for CZTSSe material systems so far, although there have been some reports for CIGS materials.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

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A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

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Time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells

Cited by 95 publications

References 16 publications

Laser applications in thin-film photovoltaics

Laser applications in thin-film photovoltaics

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

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