Time-resolved photoluminescence measurements of InGaN light-emitting diodes

Pophristić, M.; Long, Frederick H.; Tran, C. A.; Ferguson, Ian T.; Karlicek, R. F.

doi:10.1063/1.122843

Cited by 86 publications

(59 citation statements)

References 24 publications

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“…The excitation density dependence results from band filling effects, both in k-space resulting in recombination on the high-energy side of the spectrum. The recombination dynamics can be interpreted by the model of Pophristic et al [11] which accounts for strongly localized disordered systems and was found to be descriptive for the hexagonal GaInN system. By applying this model to our measurements we found a good agreement with the predictions.…”

Section: Discussionmentioning

confidence: 98%

Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

Holst¹,

Hoffmann

Broser

et al. 1999

phys. stat. sol. (b)

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Section: Discussionmentioning

confidence: 98%

Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

Holst¹,

Hoffmann

Broser

et al. 1999

phys. stat. sol. (b)

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“…Patterned sapphire substrates (PSSs) 23 or roughening in vertical LEDs (VLEDs) achieve light extraction efficiencies of over 80% today. 24,25 Methods are still under investigation to reduce TIR by surface roughening, 26 substrate patterning, chip shape optimization, and material integrating/embedding. 2 The internal quantum efficiency (IQE), the ratio of generated photons to the electron-hole recombination, was increased by improving the material quality and modification to to LED device structures.…”

Section: The Iii-nitrides For Light-emitting Diodesmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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“…Pophristic et al [23,24] discussed the timeresolved PL of InGaN light-emitting diodes and multiple quantum wells. They report a value of b increasing from 0.75 to 0.85 with increasing indium phase segregation, and emphasize that the stretched-exponential kinetics is consistent with the presence of disorder.…”

Section: Introductionmentioning

confidence: 99%

Apparent stretched-exponential luminescence decay in crystalline solids

Chen

2003

Journal of Luminescence

127

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The relaxation of different physical systems has been found to follow the stretched-exponential law, exp½Àðt=tÞ b with 0obo1: In particular, the photoluminescence from porous silicon, nm size silicon in SiO 2 , glassy materials and other solids have been reported in the literature to behave this way. It has been pointed out that the key role for this behavior is played by some kind of disorder in the system. The time constants t reported were between 10 À12 and 10 -2 s. In the present work, it is shown using numerical simulation relevant to the case of trapping controlled luminescence, that the decay from a single crystal with a single trapping state and a single kind of recombination center yields results which agree very well with the stretched-exponential function. Taking trapping parameters in the ranges known in luminescent materials for the stimulation of the decay curves yield different values of the parameter b between 0 and 1, and different values of the time constant t; typically in the micro-to milli-second range. Thus, the stretched-exponential function has been shown to be even more ubiquitous than thought so far, being able to describe the decay of luminescence in an ordered crystal. r

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Time-resolved photoluminescence measurements of InGaN light-emitting diodes

Abstract: Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In 0.02 Ga 0.98 N active layer

Cited by 86 publications

References 24 publications

Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

Review—The Current and Emerging Applications of the III-Nitrides

Apparent stretched-exponential luminescence decay in crystalline solids

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