Time-resolved photoluminescence of undoped InP

Abstract

Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.

Carrier Thermalization Dynamics in Single Zincblende and Wurtzite InP Nanowires

“…For the ZB InP NWs, τ ∼ 1.4 ns and B ∼ 2 × 10 –9 cm –3 s –1 ; whereas for the WZ InP NWs, τ ∼ 3.4 ns and B ∼ 11 × 10 –9 cm –3 s –1 . These values compare reasonably well with previous reports, − ,, taking into account that both parameters are strongly affected by sample quality, temperature, and excitation carrier density. With the knowledge of τ and B , the density loss rate through both recombination mechanisms can be extracted.…”

“…The absorption coefficient α[ E , N , T ] (Figure a) is calculated as a function of carrier density and temperature through α [ E , N , T ] = π 2 c 2 h 3 n 2 E 2 false( 2 π false) 3 B ∫ 0 E − E g ρ c false[ E false′ false] × ρ V [ E ′ − Ε ] × ( f l false[ E − Ε g − E ′ false] − f u false[ E ′ false] ) normald E ′ where n is the average index of refraction; B is the radiative bimolecular coefficient which depends on the transition matrix element; ρ i [ E ] is the 3D density of states in the conduction/valence band; f i [ E ] = (1/(1 + exp[( E – E F )/( k B T )])) is the Fermi–Dirac distribution probability that upper/lower states involved in the transition are occupied by electrons, with the quasi-Fermi energy E F [ N , T ] related to both the carrier density N and temperature T ; E ′ is the upper state energy above the conduction band minimum. For n and B , we use the average values from the literature − because only the relative change of the absorption coefficient is critical, not its absolute value. Using the Kramers–Kronig relation, we transform the calculated absorption coefficient α[ E , N , T ] to obtain the index of refraction n [ E , N , T ] as a function of carrier density and temperature.…”

Unveiling the Role of H2Plasma for Efficient InP Solar Cells

“…It was also observed previously that the minority‐carrier lifetime of InP increases as the carrier concentration reduces and reported to reach a high value of 3 μs. [ 27 ] From this, it can be inferred that the charge carrier lifetime and thus charge carrier diffusion length significantly improved after H 2 plasma treatment owing to reduced carrier concentration in InP, which is reflected in the device performance.…”

Minority-carrier lifetime in InP as a function of light bias

“…Assuming the InP B coefficient equals the GaAs value o f 2~1 0 -~' cm3/s, every sample is indeed above t h e radiative limit. A recent experiment determined t h a t , for InP, B 2 6 x cm3/s [9], thus raising TR by a factor o f three. Again, all but t h e lowest doped wafer still exceed t h e radiative limit.…”