Time-resolved photoluminescence spectroscopy of Ce:Gd₃Al₂Ga₃O₁₂ crystals

Abstract

Time-resolved photoluminescence (PL) spectra of Ce-doped Gd3Al2Ga3O12 (Ce:GAGG) crystal have been measured at various temperatures under Ce3+ 4f → 5d excitation. All time-resolved PL spectra show only a Ce3+ 5d → 4f band around 2.3 eV. Decay curves of this band consist of a fast and slow components. The temperature dependence of integrated intensities of the fast and slow components are analyzed by considering nonradiative processes starting from the ground level of an electron trap. From the results of analysis, we discuss relaxation processes of 5d electrons created under Ce3+ 4f → 5d excitation.

Photoluminescence studies on energy transfer processes in cerium-doped Gd3Al2Ga3O12 crystals

“…Optical properties of Ce:GAGG crystals have been reported so far [8][9][10]. A typical emission spectrum exhibits a broad band around 2.3 eV, which arises from the Ce 3+ 5d-4f transition.…”

A homogeneity study on (Ce,Gd)3Ga2Al3O12 crystal scintillators grown by an optical floating zone method and a traveling solvent floating zone method

“…As a representative, Ce 3+ -doped multiple aluminate garnet compounds, (Ce,Gd) 3 (Al,Ga) 5 O 12 (Ce:GGAG), have been proposed to be one of the promising scintillators for applications of X-ray detection, medical imaging etc. [11][12][13][14][15] The emission of Ce 3+ in it is characterized by an electron transition from the lowest 5d (5d 1 ) energy level to the 4f energy level 16,17 which could realize both fast decay time and high LY.…”

Visualizing cation vacancies in Ce:Gd3Al2Ga3O12 scintillators by gamma-ray-induced positron annihilation lifetime spectroscopy

“…Studies of Ce:GAGG phosphorescence [4][5][6][7][8][9][10][11][12] have indicated that it is mainly attributed to the formation of shallow electron traps. It was recently demonstrated that these traps are defect complexes of antisite Gd 2+ ions adjoining O vacancies, 13) and first-principles calculations have revealed that they are formed in Al/Ga-deficient compositions.…”