“…Another possible reason is the surface recombination of the carriers [9]. Nevertheless, some techniques like reactive deposition epitaxy (RDE) allow formation of the relatively defect-free nanostructures [10,11]. Significant efforts are directed to the formation of the smaller b-FeSi 2 nanoparticles, because such structures will let to place more irradiating centers at the same LED area, to decrease defects density near b-FeSi 2 nanoparticles and, finally, to reduce the LED device dimensions and to increase its efficiency [6].…”