2004
DOI: 10.1143/jjap.43.l930
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Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy

Abstract: Si/β-FeSi2 particles/Si(001) and Si/β-FeSi2 film/Si(111) structures were grown by reactive deposition epitaxy (RDE) and by molecular beam epitaxy (MBE), and time-resolved photoluminescence (PL) was measured from 8 K to 150 K. Both samples exhibited the same PL peak wavelength of 1.54 µm at low temperatures, but the PL decay time of 1.54 µm emission was different, showing that the luminescence originated from different sources. A short decay time (τ∼10 ns) was found to be dominant for the Si/β-FeSi2 particles/S… Show more

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Cited by 17 publications
(15 citation statements)
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“…5, the decay curve can be explained well in terms of two components, fast (16 ns) and slow (150 ns). The short decay time was found to be almost the same as the decay time observed for the Si/b-FeSi 2 -particles/Si structure [17], and thus is thought to be attributable to recombination in b-FeSi 2 . On the other hand, the long decay time is thought to be due to the dislocation-related D1 luminescence in Si, since the D1 line is another possible origin of the 1.54 mm PL.…”
Section: Resultssupporting
confidence: 57%
“…5, the decay curve can be explained well in terms of two components, fast (16 ns) and slow (150 ns). The short decay time was found to be almost the same as the decay time observed for the Si/b-FeSi 2 -particles/Si structure [17], and thus is thought to be attributable to recombination in b-FeSi 2 . On the other hand, the long decay time is thought to be due to the dislocation-related D1 luminescence in Si, since the D1 line is another possible origin of the 1.54 mm PL.…”
Section: Resultssupporting
confidence: 57%
“…Another possible reason is the surface recombination of the carriers [9]. Nevertheless, some techniques like reactive deposition epitaxy (RDE) allow formation of the relatively defect-free nanostructures [10,11]. Significant efforts are directed to the formation of the smaller b-FeSi 2 nanoparticles, because such structures will let to place more irradiating centers at the same LED area, to decrease defects density near b-FeSi 2 nanoparticles and, finally, to reduce the LED device dimensions and to increase its efficiency [6].…”
Section: Introductionmentioning
confidence: 99%
“…This aggregation is thought to be due to the lattice-matching strain or the difference in surface energy between the film and the substrate [5,6]. Recently, epitaxial b-FeSi 2 film with a flat surface has been grown on (1 0 0) Si substrates [7,8] and (1 1 1) Si substrates [9][10][11] by using an epitaxial b-FeSi 2 template prepared by solid phase epitaxy. Use of a template technique is the key to forming continuous, flat b-FeSi 2 film, and it is important to clarify the formation mechanism of flat-surface film for the development of optoelectronic devices with a multi-layer structure.…”
Section: Introductionmentioning
confidence: 99%