1983
DOI: 10.1103/physrevlett.50.454
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Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in Silicon

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Cited by 544 publications
(152 citation statements)
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“…For irradiation with pulses longer than several picoseconds and for near-threshold femtosecond pulses, following nucleation of the liquid phase at the surface, a thin liquid layer grows into the bulk of the material at a velocity limited by the speed of sound, but typically at a rate on the order of angstroms per picoseconds. In contrast, for fluences twice the melting threshold or greater [12][13][14][15] a significantly faster, sub-picosecond change of the linear optical properties at the surface is seen, with reflectivities reaching values equal to that of the conventional liquid phase in a few hundred femtoseconds [15]. In other experiments, a reduction in the second-harmonic-inreflection signal, suggesting a sub-picosecond loss of crystalline order at the very surface, was also seen [12,14].…”
Section: Introductionmentioning
confidence: 89%
See 1 more Smart Citation
“…For irradiation with pulses longer than several picoseconds and for near-threshold femtosecond pulses, following nucleation of the liquid phase at the surface, a thin liquid layer grows into the bulk of the material at a velocity limited by the speed of sound, but typically at a rate on the order of angstroms per picoseconds. In contrast, for fluences twice the melting threshold or greater [12][13][14][15] a significantly faster, sub-picosecond change of the linear optical properties at the surface is seen, with reflectivities reaching values equal to that of the conventional liquid phase in a few hundred femtoseconds [15]. In other experiments, a reduction in the second-harmonic-inreflection signal, suggesting a sub-picosecond loss of crystalline order at the very surface, was also seen [12,14].…”
Section: Introductionmentioning
confidence: 89%
“…In contrast, for fluences twice the melting threshold or greater [12][13][14][15] a significantly faster, sub-picosecond change of the linear optical properties at the surface is seen, with reflectivities reaching values equal to that of the conventional liquid phase in a few hundred femtoseconds [15]. In other experiments, a reduction in the second-harmonic-inreflection signal, suggesting a sub-picosecond loss of crystalline order at the very surface, was also seen [12,14]. These observations indirectly indicate that an ultrafast solid-to-liquid phase transition occurs at the surface of the semiconductor on a time-scale faster than carrier-lattice equilibration times.…”
Section: Introductionmentioning
confidence: 99%
“…Recent optical experiments provide some evidence of laser-induced disordering in crystalline silicon on a time scale comparable to the phonon period (~70 fs) [4][5][6]. Nevertheless, because optical measurements do not provide direct information about the atomic positions and coordination, they are unable to address the fundamental scientific questions related to structural dynamics in this regime.…”
Section: Time-resolved Bragg Diffraction Of Order-disorder Transitionsmentioning
confidence: 99%
“…To date, ultrafast non-equilibrium phase transitions in crystals with diamond and zincblende lattice structure (Si, GaAs, and InSb) have been studied using a variety of indirect optical techniques [40][41][42][43][44][45][46]. Recent optical experiments provide some evidence of laser-induced disordering in crystalline silicon on a time scale comparable to the phonon period (~70 fs) [42,44,47].…”
Section: Iv2 Order-disorder Transitions In Solids and At Surfacesmentioning
confidence: 99%