The possibility of band gap engineering (BGE) in RAlO
3
(R = Y, La, Gd, Yb, Lu) perovskites in the context of trap depths
of intrinsic point defects was investigated comprehensively using
experimental and theoretical approaches. The optical band gap of the
materials,
E
g
, was determined via both
the absorption measurements in the VUV spectral range and the spectra
of recombination luminescence excitation by synchrotron radiation.
The experimentally observed effect of
E
g
reduction from ∼8.5 to ∼5.5 eV in RAlO
3
perovskites with increasing R
3+
ionic radius was confirmed
by the DFT electronic structure calculations performed for RM
III
O
3
crystals (R = Lu, Y, La; M
III
=
Al, Ga, In). The possibility of BGE was also proved by the analysis
of thermally stimulated luminescence (TSL) measured above room temperature
for the far-red emitting (Y/Gd/La)AlO
3
:Mn
4+
phosphors,
which confirmed decreasing of the trap depths in the cation sequence
Y → Gd → La. Calculations of the trap depths performed
within the super cell approach for a number of intrinsic point defects
and their complexes allowed recognizing specific trapping centers
that can be responsible for the observed TSL. In particular, the electron
traps of 1.33 and 1.43 eV (in YAlO
3
) were considered to
be formed by the energy level of oxygen vacancy (V
O
) with
different arrangement of neighboring Y
Al
and V
Y
, while shallower electron traps of 0.9–1.0 eV were related
to the energy level of Y
Al
antisite complexes with neighboring
V
O
or (V
O
+ V
Y
). The effect of the
lowering of electron trap depths in RAlO
3
was demonstrated
for the V
O
-related level of the (Y
Al
+ V
O
+ V
Y
) complex defect for the particular case of
La substituting Y.