The kinetics of laser pulse‐induced crystallization of amorphous Ge films are investigated by time‐resolved transmission electron microscopy. Crystallization starts above a threshold energy of ≈ 4 μJ (laser pulse 532 nm, 20 ns, 65 μm ∅︁) with a delay of ≈ 10 ns, decreasing with increasing energy, after the laser pulse and proceeds by spherulitic growth — in “explosive” films — with ≈ 10 m/s at the centre and by growth of plates with ≈ 20 m/s at the edge of the irradiated area Delays and velocities of crystallization are interpreted with a kinetic model based on nucleation growth, and crystallization of a supercooled liquid in a superheated amorphous solid.