Time response demonstration of in situ lattice deformation under an applied electric field by synchrotron-based time-resolved X-ray diffraction in polar-axis-oriented epitaxial Pb(Zr,Ti)O₃ film

Abstract

The dependence of applied rectangular pulses with various widths on the crystal structure change was investigated by time-resolved synchrotron-based X-ray diffraction measurement. A (001)-oriented epitaxial Pb(Zr0.5Ti0.5)O3 film of 2.1 µm thickness grown on a (100)cSrRuO3//(100)LaNiO3//(100)CaF2 substrate by metal organic chemical vapor deposition was investigated. The crystal lattice increased almost linearly with increasing applied electric field up to 230 kV/cm in the case of a 0.3-µs-width pulse. This elongation with the application of an electric field was ascertained to be almost independent of the pulse width from 0.3 to 2000 µs at 190 kV/cm. These values were almost consistent with the macroscopic measurements obtained at 5 and 1000 Hz by piezoelectric force macroscopy. The present results show that the time-resolved XRD measurement is very useful for analyzing the frequency dependence of the piezoelectric response in view of the crystal structure change because the crystal structure change under an applied electric field can be systematically investigated by changing the applied pulse width.

In Situ XRD Observation of Crystal Deformation of Piezoelectric (K,Na)NbO3 Thin Films

“…Numerous researchers have reported that KNN thin films exhibit strong piezoelectric properties, and piezoelectric energy harvesters with KNN thin films have an output power comparable to that of harvesters with PZT thin films. , However, the origin of the strong piezoelectric properties of KNN thin films remains unclear because crystallographic deformation by piezoelectric effects is not yet understood in detail. Recent progress with in situ X-ray diffraction (XRD) measurements has enabled us to observe directly how the crystal structures of ferroelectric thin films change under an applied electric field. − In a previous study, we reported a comparative investigation of the macroscopic and microscopic piezoelectric properties of PZT thin films using two approaches: the cantilever method and in situ XRD measurements . We found that the piezoelectric property of a polycrystalline PZT thin film is larger than that of an epitaxial PZT thin film, likely because of the rotation of the polarization direction accompanied by a crystal-phase transition or domain reorientation in the polycrystalline PZT thin film.…”

Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

“…In the case of piezoelectricity, the lattice distortion of piezo elements such as lead zirconate titanate materials and devices under an applied voltage has been observed using time-resolved stroboscope neutron and X-ray diffraction techniques. [16][17][18][19] Compared with the piezoelectric constants of these piezo compounds (on the order of several hundred picometers per volt), those of AlGaN or GaN are two orders of magnitude smaller. Thus, the observation of IPE-induced lattice deformation in AlGaN and GaN using diffraction techniques is challenging.…”