Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses

Wu, You‐Lin; Lin, Shi-Tin; Lee, Chih-Peng

doi:10.1109/tdmr.2008.918987

Cited by 30 publications

(1 citation statement)

References 19 publications

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“…The measurement setup can be found elsewhere. 5) Figure 1 demonstrates a typical nanoscale I-V characteristic of ALD HfO 2 measured by conductive atomic force microscopy (CAFM). Three conduction regions can be clearly observed.…”

Section: Methodsmentioning

confidence: 99%

Modeling Nanoscale Current Conduction in HfO₂High-kDielectrics

Lin¹,

Hwang

2009

Jpn. J. Appl. Phys.

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Fowler-Nordheim (FN) tunneling and a two-trap-assisted tunneling (TTAT) model were adopted to describe the nanoscale current-voltage (I-V ) curves of the atomic layer deposited (ALD) HfO 2 before hard breakdown. Not including the hard breakdown region, all current conduction regions could be correctly simulated. Our simulation results indicated that the traps were mainly generated within one third of the oxide thickness and that the plateau region in the I-V curves was due to the increased contribution of TTAT current in the total oxide conduction current. #

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Section: Methodsmentioning

confidence: 99%

Modeling Nanoscale Current Conduction in HfO₂High-kDielectrics

Lin¹,

Hwang

2009

Jpn. J. Appl. Phys.

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Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures

Arinero¹,

Touboul²,

Ramonda³

et al. 2012

Appl Nanosci

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The electrical stress behaviour of non-irradiated and irradiated (2 to 7-nm thick) SiO 2 /Si structures is investigated using conductive-atomic force microscopy. A protocol based on the successive application of two rampedvoltage stresses (RVS) on each test point is performed. The environmental implementation conditions of such an experiment are then investigated. A statistical approach based on the use of Weibull distributions is also adopted. Before irradiation, for the thinnest samples, it is shown evidence of stress-induced trap-assisted tunnelling leading to a high decrease in threshold voltages on the second RVS. After high-dose X-ray irradiations, the first RVS exhibit voltage-shift effects increasing with the oxide film thickness, whereas for the second RVS, no additional effect is observed. The high locality of these measurements, sensitive to a few tens of trapped charges, is therefore demonstrated and constitutes a new step towards a better understanding of oxide degradation mechanisms due to radiation effects.

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Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Lanza

Porti

Nafría

et al. 2009

Microelectronic Engineering

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Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses

Cited by 30 publications

References 19 publications

Modeling Nanoscale Current Conduction in HfO₂High-kDielectrics

Modeling Nanoscale Current Conduction in HfO₂High-kDielectrics

Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

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Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses

Cited by 30 publications

References 19 publications

Modeling Nanoscale Current Conduction in HfO2High-kDielectrics

Modeling Nanoscale Current Conduction in HfO2High-kDielectrics

Conductive atomic force microscopy as a tool to reveal high ionising dose effects on ultra thin SiO2/Si structures

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Contact Info

Product

Resources

About

Modeling Nanoscale Current Conduction in HfO₂High-kDielectrics

Modeling Nanoscale Current Conduction in HfO₂High-kDielectrics